Patents by Inventor Yi-Wen Kao

Yi-Wen Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sustained-release anesthetic compositions and methods of preparation thereof
    Patent number: 11938220
    Abstract: Provided is an anesthetic composition for locally administering a local anesthetic agent to a subject in need thereof. The anesthetic composition has a lipid based complex prepared by hydrating a lipid cake containing a local anesthetic agent and a lipid mixture with an aqueous buffer solution at a pH higher than 5.5. Also provided is a method to prepare an anesthetic composition using a simpler and more robust for large-scale manufacture and for providing a high molar ratio of local anesthetic agent to phospholipid content as compared to the prior art. This anesthetic composition has a prolonged duration of efficacy adapted to drug delivery.
    Type: Grant
    Filed: March 30, 2019
    Date of Patent: March 26, 2024
    Assignees: Taiwan Liposome Co., Ltd, TLC Biopharmaceuticals, Inc.
    Inventors: Keelung Hong, Yun-Long Tseng, Chun-Yen Lai, Wan-Ni Yu, Hao-Wen Kao, Yi-Yu Lin
  • P-type metal oxide semiconductor material and fabrication method thereof
    Patent number: 8007694
    Abstract: A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein to the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1 O.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: August 30, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Kuo-Chuang Chiu, Yi-Wen Kao, Shan-Haw Chiou
  • P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL AND FABRICATION METHOD THEREOF
    Publication number: 20100148133
    Abstract: A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1O.
    Type: Application
    Filed: April 28, 2009
    Publication date: June 17, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Kuo-Chuang CHIU, Yi-Wen KAO, Shan-Haw CHIOU