Patents by Inventor Yi-Wen Tseng

Yi-Wen Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9153725
    Abstract: A solar cell includes a crystalline silicon semiconductor substrate, an intrinsic amorphous silicon semiconductor layer, an amorphous silicon semiconductor layer and a transparent conductive layer. The crystalline silicon semiconductor substrate possesses a first doped type and a trench is formed thereon to form an enclosed area to define a first electrode region in the enclosed area and a second electrode region out of the enclosed area. The intrinsic amorphous silicon semiconductor layer, the amorphous silicon semiconductor layer and the transparent conductive layer are formed sequentially on the crystalline silicon semiconductor substrate and in the trench. Having discontinuity in the trench, the amorphous silicon semiconductor layer, the amorphous silicon semiconductor layer and the transparent conductive layer provide an isolation function between the previously defined first and second electrode regions.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: October 6, 2015
    Assignee: NEO SOLAR POWER CORP.
    Inventors: Jau-Min Ding, Hsin-Chiao Luan, Kun-Chih Lin, Chih-Hung Liao, Yi-Wen Tseng
  • Publication number: 20150179858
    Abstract: A solar cell includes a crystalline silicon semiconductor substrate, an intrinsic amorphous silicon semiconductor layer, an amorphous silicon semiconductor layer and a transparent conductive layer. The crystalline silicon semiconductor substrate possesses a first doped type and a trench is formed thereon to form an enclosed area to define a first electrode region in the enclosed area and a second electrode region out of the enclosed area. The intrinsic amorphous silicon semiconductor layer, the amorphous silicon semiconductor layer and the transparent conductive layer are formed sequentially on the crystalline silicon semiconductor substrate and in the trench. Having discontinuity in the trench, the amorphous silicon semiconductor layer, the amorphous silicon semiconductor layer and the transparent conductive layer provide an isolation function between the previously defined first and second electrode regions.
    Type: Application
    Filed: August 21, 2014
    Publication date: June 25, 2015
    Inventors: JAU-MIN DING, HSIN-CHIAO LUAN, KUN-CHIH LIN, CHIH-HUNG LIAO, YI-WEN TSENG
  • Patent number: 7066753
    Abstract: An electronic device, which is capable of multidirectional rotation, includes a connecting unit, which has a connecting portion at one end detachably connectable to an external electronic device and a spherical ball socket at an opposite end, and a body unit having a housing and an electronic circuit assembly mounted inside the housing. The housing has a coupling structure that receives the spherical ball socket for allowing rotation of the spherical ball socket relative to the housing.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: June 27, 2006
    Assignee: Askey Computer Corp.
    Inventor: Yi-Wen Tseng