Patents by Inventor Yi Weng

Yi Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250237718
    Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.
    Type: Application
    Filed: April 8, 2025
    Publication date: July 24, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Che-Wei Chang, Si-Han Tsai, Ching-Hua Hsu, Jing-Yin Jhang, Yu-Ping Wang
  • Publication number: 20250234789
    Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a cap layer on sidewalls of the first MTJ and the second MTJ, a dielectric layer around and directly contacting the cap layer, a first metal interconnection on the first MTJ, the second MTJ, and the dielectric layer, and an inter-metal dielectric (IMD) layer around the dielectric layer and the first metal interconnection.
    Type: Application
    Filed: March 6, 2025
    Publication date: July 17, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Si-Han Tsai, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
  • Publication number: 20250228139
    Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.
    Type: Application
    Filed: March 26, 2025
    Publication date: July 10, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Si-Han Tsai, Che-Wei Chang, Jing-Yin Jhang
  • Publication number: 20250212420
    Abstract: A semiconductor structure includes a substrate having a memory device region covered by a first dielectric layer, a memory stack structure on the first dielectric layer, an insulating layer conformally covering the memory stack structure and the first dielectric layer, a second dielectric layer on the insulating layer, an etching stop layer on the second dielectric layer, a third dielectric layer on the etching stop layer, and a second interconnecting structure through the third dielectric layer, the etching stop layer and the insulating layer to contact a top surface of the memory stack structure. The insulating layer directly contacts a bottom surface of the etching stop layer and partially covers a bottom surface and a lower sidewall of the second interconnecting structures.
    Type: Application
    Filed: March 12, 2025
    Publication date: June 26, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Jing-Yin Jhang, Chien-Ting Lin
  • Publication number: 20250204272
    Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.
    Type: Application
    Filed: March 6, 2025
    Publication date: June 19, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Si-Han Tsai, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
  • Publication number: 20250194436
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
    Type: Application
    Filed: February 24, 2025
    Publication date: June 12, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Publication number: 20250160217
    Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.
    Type: Application
    Filed: January 14, 2025
    Publication date: May 15, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Si-Han Tsai, Dong-Ming Wu, Chen-Yi Weng, Ching-Hua Hsu, Ju-Chun Fan, Yi-Yu Lin, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang
  • Patent number: 12290005
    Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.
    Type: Grant
    Filed: May 30, 2024
    Date of Patent: April 29, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Si-Han Tsai, Che-Wei Chang, Jing-Yin Jhang
  • Patent number: 12284812
    Abstract: A semiconductor structure includes a substrate, a first dielectric layer on the substrate, a plurality of memory stack structures on the first dielectric layer, an insulating layer conformally covering the memory stack structures and the first dielectric layer, a second dielectric layer on the insulating layer and filling the spaces between the memory stack structures, a first interconnecting structure through the second dielectric layer, wherein a top surface of the first interconnecting structure is flush with a top surface of the second dielectric layer and higher than top surfaces of the memory stack structures, a third dielectric layer on the second dielectric layer, and a plurality of second interconnecting structures through the third dielectric layer, the second dielectric layer and the insulating layer on the top surfaces of the memory stack structures to contact the top surfaces of the memory stack structures.
    Type: Grant
    Filed: April 16, 2024
    Date of Patent: April 22, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Jing-Yin Jhang, Chien-Ting Lin
  • Patent number: 12274180
    Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.
    Type: Grant
    Filed: March 17, 2023
    Date of Patent: April 8, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Si-Han Tsai, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
  • Publication number: 20250107454
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on a first sidewall of the MTJ, and a second spacer on a second sidewall of the MTJ. Preferably, the first spacer and the second spacer are asymmetric, the first spacer and the second spacer have different heights, and a top surface of the MTJ includes a reverse V-shape.
    Type: Application
    Filed: December 11, 2024
    Publication date: March 27, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, Chen-Yi Weng, Chin-Yang Hsieh, I-Ming Tseng, Jing-Yin Jhang, Yu-Ping Wang
  • Patent number: 12262647
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
    Type: Grant
    Filed: March 1, 2024
    Date of Patent: March 25, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Patent number: 12232425
    Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.
    Type: Grant
    Filed: November 21, 2023
    Date of Patent: February 18, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Si-Han Tsai, Dong-Ming Wu, Chen-Yi Weng, Ching-Hua Hsu, Ju-Chun Fan, Yi-Yu Lin, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang
  • Publication number: 20250048936
    Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.
    Type: Application
    Filed: October 17, 2024
    Publication date: February 6, 2025
    Applicant: United Microelectronics Corp.
    Inventors: Hui-Lin Wang, Po-Kai Hsu, Chen-Yi Weng, Jing-Yin Jhang, Yu-Ping Wang, Hung-Yueh Chen
  • Publication number: 20250035718
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, in which the MTJ includes a pinned layer on the substrate, a reference layer on the pinned layer, a barrier layer on the reference layer, and a free layer on the barrier layer. Preferably, the free layer and the barrier layer have same width and the barrier layer and the reference layer have different widths.
    Type: Application
    Filed: October 15, 2024
    Publication date: January 30, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen -Yi Weng, Che-Wei Chang, Si-Han Tsai, Ching-Hua Hsu, Jing-Yin Jhang, Yu-Ping Wang
  • Patent number: 12201032
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on a first sidewall of the MTJ, and a second spacer on a second sidewall of the MTJ. Preferably, the first spacer and the second spacer are asymmetric, the first spacer and the second spacer have different heights, and a top surface of the MTJ includes a reverse V-shape.
    Type: Grant
    Filed: April 6, 2021
    Date of Patent: January 14, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, Chen-Yi Weng, Chin-Yang Hsieh, I-Ming Tseng, Jing-Yin Jhang, Yu-Ping Wang
  • Publication number: 20240415026
    Abstract: A semiconductor device includes a substrate comprising a MTJ region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a metal interconnection on the logic region. Preferably, the MTJ includes a bottom electrode layer having a gradient concentration, a free layer on the bottom electrode layer, and a top electrode layer on the free layer.
    Type: Application
    Filed: August 21, 2024
    Publication date: December 12, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chia-Chang Hsu, Chen-Yi Weng, Chin-Yang Hsieh, Jing-Yin Jhang
  • Patent number: 12161050
    Abstract: The high-density MRAM device of the present invention has a second interlayer dielectric (ILD) layer covering the capping layer in the MRAM cell array area and the logic area. The thickness of the second ILD layer in the MRAM cell array area is greater than that in the logic area. The composition of the second ILD layer in the logic area is different from the composition of the second ILD layer in the MRAM cell array area.
    Type: Grant
    Filed: September 14, 2022
    Date of Patent: December 3, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Ching-Hua Hsu, Chen-Yi Weng, Jing-Yin Jhang, Po-Kai Hsu
  • Patent number: 12156478
    Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.
    Type: Grant
    Filed: February 15, 2023
    Date of Patent: November 26, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Po-Kai Hsu, Chen-Yi Weng, Jing-Yin Jhang, Yu-Ping Wang, Hung-Yueh Chen
  • Patent number: 12146927
    Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.
    Type: Grant
    Filed: October 4, 2023
    Date of Patent: November 19, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Che-Wei Chang, Si-Han Tsai, Ching-Hua Hsu, Jing-Yin Jhang, Yu-Ping Wang