Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.

Abstract: A method and a system for detecting blepharoptosis are disclosed. The method and the system include image capturing via a camera to generate three eye images; executing an image processing on the eye images to generate the corresponding border images; executing an image computing on the eye image and the corresponding border image to obtain a plurality of characteristic variables; performing a calculation according to the plurality of characteristic variables to obtain a characteristic parameter set; and comparing the characteristic parameter set with a preset blepharoptosis criteria information to obtain a blepharoptosis severity and a levator function.

Abstract: A method and a system for detecting blepharoptosis are disclosed. The method and the system include image capturing via a camera to generate three eye images; executing an image processing on the eye images to generate the corresponding border images; executing an image computing on the eye image and the corresponding border image to obtain a plurality of characteristic variables; performing a calculation according to the plurality of characteristic variables to obtain a characteristic parameter set; and comparing the characteristic parameter set with a preset blepharoptosis criteria information to obtain a blepharoptosis severity and a levator function.