Patents by Inventor Yi-Wun Sie

Yi-Wun Sie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210075189
    Abstract: The present invention comprises a thermally-conductive and electrically-conductive substrate, a bonding layer, a galvanic isolation layer, a P-type electrode, a P-type Bragg reflection layer, a diode light-emitting layer, an N-type Bragg band-pass reflection layer and an N-type electrode stacked in sequence. The galvanic isolation layer comprises a cylindrical opening for accommodating the diode light-emitting layer. The N-type electrode comprises a light-output opening facing the cylindrical opening and completely covering the cylindrical opening. When current input by the N-type electrode passes through the N-type Bragg band-pass reflection layer, it is concentrated under constraint of the galvanic isolation layer and passes through the diode light-emitting layer via the cylindrical opening according to correspondence in position and size of the cylindrical opening and the light-output opening.
    Type: Application
    Filed: September 11, 2019
    Publication date: March 11, 2021
    Inventors: Chih-Sung Chang, Wei-Yu Yen, Li-Ping Chou, Li-Jun Lai, Yi-Wun Sie