Abstract: A binuclear organometallic complex enabling highly efficient phospholuminescence and an organic electroluminescent device using the same. The binuclear organometallic complex, which can be suitably used to form an organic layer of an organic electroluminescent device, produces luminescence in the wavelength range of 430-650 nm, and induces white electroluminescence when combined with green and red luminescent materials.

Abstract: The present invention is related to an intermediate layer of an organic electroluminescent device comprising an amine derivative substance which may further comprise a functional group capable of forming crosslinks. In particular, the substance may have excellent solubility and can be easily formed into a thin film. Specifically, the thin film may be stable in the solvent and can be easily formed to various thicknesses. Furthermore, the band gaps and LUMO/HOMO values may be easily controlled depending of the characteristics of the hole transporting material, so that an intermediate layer with the desired characteristics may be formed. Accordingly, the introduction of an intermediate layer manufactured using the substance of the present invention as the intermediate layer may result in an organic electroluminescent device having high efficiency and a longer lifespan.

Abstract: Disclosed herein is a siloxane-based resin prepared by hydrolyzing and polycondensing a cyclic siloxane compound, a silane compound having three hydrolysable functional groups and a silane compound having three hydrolysable functional groups and one heat-labile functional group, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein is a method of forming an insulating film between interconnect layers of a semiconductor device using the siloxane-based resin thus prepared, whereby an insulating film having low dielectric constant as well as excellent mechanical properties can be obtained.

Abstract: An organometallic complex that increases an energy band gap between HOMO and triplet MLCT states, and enables highly efficient phospholuminescence and can be used for an organic electroluminescent device. The organometallic complex, which is suitably used for forming an organic layer of the organic electroluminescent device, provides a luminescence maximum emission in the wavelength range of 400-650 nm, and induces white electroluminescence when combined with green or red luminescent materials.

Abstract: An organometallic complex which includes a carboxylic acid as an ancillary ligand, and an organic electroluminescent device employing the same. The organometallic complex is useful as a phosphorescence dopant material of an organic electroluminescent device due to its high luminosity in the range of the blue wavelengths.

Abstract: Disclosed herein are a siloxane-based resin having novel structure and an interlayer insulating film for a semiconductor device formed using the same. The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties, heat-stability and crack-resistance that they are useful materials for an insulating film between interconnect layers of a semiconductor device.

Abstract: The new metallocene catalysts according to the present invention are prepared by reacting a metallocene compound with a compound having at least two functional groups. The metallocene compound is a transition metal compound which a transition metal is coordinated with a main ligand such as cycloalkanedienyl group and an ancillary ligand. The functional groups of the compound having at least two functional groups are selected from the group consisting of a hydroxy group, a thiol group, a primary amine group, a secondary amine group, etc. The metallocene catalysts according to the present invention have a structure which an ancillary ligand of a metallocene compound is bonded with functional groups. A structure of the metallocene catalysts can be varied according to the metallocene compounds, the compound having at least two functional groups, and the molar ratio of each reactant. The metallocene catalyst is employed with a co-catalyst for styrene and olefin polymerization.

Abstract: Disclosed herein are a novel gemini surfactant and a method for preparing a mesoporous material using the gemini surfactant. The method for preparing a mesoporous material uses the novel gemini surfactant as a structure-directing agent to provide a mesoporous material has a pore size of 10 nm or less with uniform pore size distribution.

Abstract: A composition for preparing a porous interlayer dielectric thin film which includes a saccharide or saccharide derivative, a thermo-stable organic or inorganic matrix precursor, and a solvent for dissolving the two solid components. Also provided is a dielectric thin film having evenly distributed nano-pores with a diameter of less than 50 Å, which is required for semiconductor devices.

Abstract: The present invention provides a composition for preparing porous dielectric then films containing pore-generating material, said composition comprising gemini detergent, and/or a quaternary alkyl ammonium salt, a thermo-stable organic or inorganic matrix precursor, and solvent for dissolving the two solid components. There is also provided an interlayer insulating film having good mechanical properties such as hardness, modulus and hydroscopicity, which is required for semiconductor devices.

Abstract: Disclosed herein is a siloxane-based resin prepared by hydrolyzing and polycondensing a cyclic siloxane compound, a silane compound having three hydrolysable functional groups and a silane compound having three hydrolysable functional groups and one heat-labile functional group, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein is a method of forming an insulating film between interconnect layers of a semiconductor device using the siloxane-based resin thus prepared, whereby an insulating film having low dielectric constant as well as excellent mechanical properties can be obtained.

Abstract: The new metallocene catalysts according to the present invention are prepared by reacting a metallocene compound with a compound having at least two functional groups. The metallocene compound is a transition metal compound which a transition metal is coordinated with a main ligand such as cycloalkanedienyl group and an ancillary ligand. The functional groups of the compound having at least two functional groups are selected from the group consisting of a hydroxy group, a thiol group, a primary amine group, a secondary amine group, etc. The metallocene catalysts according to the present invention have a structure which an ancillary ligand of a metallocene compound is bonded with functional groups. A structure of the metallocene catalysts can be varied according to the metallocene compounds, the compound having at least two functional groups, and the molar ratio of each reactant. The metallocene catalyst is employed with a co-catalyst for styrene and olefin polymerization.

Abstract: Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.

Abstract: The present invention provides a method for forming insulating film between interconnect layers in microelectronic devices, said method comprising the steps of: preparing siloxane-based resins by hydrolyzing and polycondensing the compound represented by the following formula (1), with or without the compound represented by the following formula (2), in an organic solvent in the presence of a catalyst and water; coating a silicon substrate with the siloxane-based resins dissolved in an organic solvent; and heat-curing the resulting coating film:  RSiX1X2X3  [2] in which, R is hydrogen atom, C1˜C3 alkyl group, C3˜C10 cycloalkyl group, or C6˜C15 aryl group; X1, X2 and X3 are independently C1˜C3 alkyl group, C1˜C10 alkoxy group, or halogen atom; n is an integer ranging from 3 to 8; and m is an integer ranging from 1 to 10.

Abstract: The present invention provides a composition for preparing substances having nano-pores, said composition comprising cyclodextrin derivative, thermo-stable organic or inorganic matrix precursor, and solvent for dissolving said two solid components. There is also provided an interlayer insulating film having evenly distributed nano-pores with a diameter less than 50 Å, which is required for semiconductor devices.

Abstract: Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.

Abstract: Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.

Abstract: The present invention provides a composition for preparing substances having nano-pores, said composition comprising cyclodextrin derivative, thermo-stable organic or inorganic matrix precursor, and solvent for dissolving said two solid components. There is also provided an interlayer insulating film having evenly distributed nano-pores with a diameter less than 50 Å, which is required for semiconductor devices.

Abstract: A styrene random copolymer includes at least one unit of styrene derivative and at least one unit of macromonomer. The at least one unit of styrene derivative is polymerized from a styrene derivative monomer of formula (1). The at least one unit of macromonomer is polymerized from a macromonomer of formula (2). In formulae (1) and (2), R1 is selected from the group consisting of hydrogen, halogen, and alkyl groups with 1˜20 carbon atoms, R2 is at least one selected from the group consisting of saturated hydrocarbons with 1˜20 carbon atoms, aromatic groups, and cycloalkyl groups with the proviso that R2 is not —CO— or —CH2—C6H4—, R3 is a saturated hydrocarbon group with 1˜10 carbon atoms, X is at least one ion polymerizable monomer unit. The amount of the macromonomer is 0.

Abstract: The present invention provides a method for forming insulating film between interconnect layers in microelectronic devices, said method comprising the steps of: preparing siloxane-based resins by hydrolyzing and polycondensing the compound represented by the following formula (1), with or without the compound represented by the following formula (2), in an organic solvent in the presence of a catalyst and water; coating a silicon substrate with the siloxane-based resins dissolved in an organic solvent; and heat-curing the resulting coating film: 1  RSiX1X2X3  [2]