Abstract: One or more embodiments described herein relate to selective methods for fabricating devices and structures. In these embodiments, the devices are exposed inside the process volume of a process chamber. Precursor gases are flowed in the process volume at certain flow ratios and at certain process conditions. The process conditions described herein result in selective epitaxial layer growth on the {100} planes of the crystal planes of the devices, which corresponds to the top of each of the fins. Additionally, the process conditions result in selective etching of the {110} plane of the crystal planes, which corresponds to the sidewalls of each of the fins. As such, the methods described herein provide a way to grow or etch epitaxial films at different crystal planes. Furthermore, the methods described herein allow for simultaneous epitaxial film growth and etch to occur on the different crystal planes.

Abstract: Aspects of the present disclosure include needle devices in which a needle has a notch or slot. A flashback indicator is provided at least in part in the needle lumen at the notch, adjacent the notch, or partially inside and partially outside of the notch. In use, blood flow through the needle lumen is indicated at the flashback indicator. When used with a catheter tube, the flashback indicator can be viewed through the catheter tube. The needle with the notch and flashback indicator may be used with a variety of needle applications, including as catheter assemblies, indwelling assemblies, and most, if not all, over-the-needle type devices.