Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: An instant monitoring system, applied to a circuit board, for inspecting an area under stress on the circuit board, comprises a strain gage, with a thin film structure, and at least one resistance, while the strain gage, with a first resistance value before receiving a stress, is embedded on the area, which receiving a stress, of the circuit board. The strain gage and the resistances, with the same first resistance value, connect electrically to form a Wheatstone bridge circuit.