Abstract: A method and apparatus for morphological analysis of neural cells may include receiving an immunohistochemistry (IHC) image of one or more neural cells; detecting the one or more neural cells in the IHC image using a first neural network, wherein the detecting includes identifying boundaries of the one or more neural cells; generating a segmentation cell mask using a second neural network based on the identified boundaries of the one or more neural cells; and classifying the one or more neural cells based on the generated segmentation cell mask using a trained classification model.

Abstract: An alternating phase shift mask. The alternating phase shift mask includes a transparent substrate, a light-shielding layer disposed on the transparent substrate to define a transparent array consisting of a plurality of first phase rows and a plurality of second phase rows alternately interposed between the first phase rows. The alternating phase shift mask further comprises a phase interference enhancement feature disposed a predetermined distance from the outermost row of the transparent array, wherein the phases of the phase interference enhancement feature and the outermost row are reverse.

Abstract: The present invention uses a double exposure and double etching method to improve critical dimension uniformity. A coating layer is formed on a wafer that includes a first area and a second area. The first area and the second area are separately patterned with different processing conditions. By means of this two-stage patterning, the CD uniformity between wafer center and wafer edge is successfully improved over the conventional single-stage patterning process. The fabrication yield is thus enhanced.

Abstract: An alternating phase shift mask. The alternating phase shift mask includes a transparent substrate, a light-shielding layer disposed on the transparent substrate to define a transparent array consisting of a plurality of first phase rows and a plurality of second phase rows alternately interposed between the first phase rows. The alternating phase shift mask further comprises a phase interference enhancement feature disposed a predetermined distance from the outermost row of the transparent array, wherein the phases of the phase interference enhancement feature and the outermost row are reverse.

Abstract: The present invention uses a double exposure and double etching method to improve critical dimension uniformity. A coating layer is formed on a wafer that includes a first area and a second area. The first area and the second area are separately patterned with different processing conditions. By means of this two-stage patterning, the CD uniformity between wafer center and wafer edge is successfully improved over the conventional single-stage patterning process. The fabrication yield is thus enhanced.

Abstract: The present invention relates to a method of removing a photo-resist layer from a semiconductor wafer. The semiconductor wafer comprises an inter-metal dielectric layer (IMD), and a photo-resist layer positioned on the IMD. The method comprises performing a dry cleaning process by injecting a nitrogen-containing gas into an oxygen-free environment and utilizing a plasma reaction to remove most of the photo-resist layer, and performing a wet cleaning process to completely remove the photo-resist layer.