Patents by Inventor Yi-Yu Lin, I

Yi-Yu Lin, I has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TRENCH MOS DEVICE HAVING A TERMINATION STRUCTURE WITH MULTIPLE FIELD-RELAXATION TRENCHES FOR HIGH VOLTAGE APPLICATIONS
    Publication number: 20150200250
    Abstract: A termination structure for a semiconductor device includes a semiconductor substrate having an active region and a termination region. Two or more trench cells are located in the termination region and extend from a boundary of the active region toward an edge of the semiconductor substrate. A termination trench is formed in the termination region on a side of the trench cells remote from the active region. A conductive spacer is located adjacent to a sidewall of the termination trench nearest the trench cells. A first oxide layer is formed in the termination trench and contacts a sidewall of the conductive spacer. A first conductive layer is formed on a backside surface of the semiconductor substrate. A second conductive layer is formed atop the active region and the termination region.
    Type: Application
    Filed: January 10, 2014
    Publication date: July 16, 2015
    Applicant: Vishay General Semiconductor LLC
    Inventors: Yi-Yu Lin, I, Chun-Chueh Chang, Pu Ju Kung