Abstract: A power supply unit supplies power to a load, and the power supply unit includes a power factor corrector, a DC conversion module, and an isolated conversion module. The power factor corrector is plugged into a first main circuit board and converts an AC power into a DC power. The DC conversion module is plugged into the first main circuit board and converts the DC power into a main power. The isolated conversion module includes a bus capacitor, the bus capacitor is coupled to the DC conversion module through a first power copper bar, and coupled to the power factor corrector through a second power copper bar. The first power copper bar and the second power copper bar are arranged on a side opposite to the first main circuit board, and are arranged in parallel with the first main circuit board.

Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.

Abstract: In example implementations described herein, there are systems and methods enabling manufacturers to become more efficient by providing a digital tool to track, visualize, quantify, and notify production bottlenecks for quick actions. Some implementations include an apparatus including a processor configured to analyze time-stamp data collected associated with a plurality of elements of an industrial process. The processor may be configured to generate, based on the analyzed time-stamp data, a color coded visualization of the industrial process, where generating the color coded visualization includes associating each of the plurality of elements of the industrial process with a corresponding color indicating a state of an element in the plurality of elements of the industrial process. The processor may further be configured to present, via a display, the generated color coded visualization of the industrial process.

Abstract: A 3D IC package is provided. The 3D IC package includes: a first IC die comprising a first substrate at a back side of the first IC die; a second IC die stacked at the back side of the first IC die and facing the first substrate; a TSV through the first substrate and electrically connecting the first IC die and the second IC die, the TSV having a TSV cell including a TSV cell boundary surrounding the TSV; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the TSV, and the protection module is within the TSV cell.

Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.

Abstract: An electromagnetic thermotherapeutic apparatus includes: a plurality of needle units respectively having head portions and needle portions; a base unit having a base plate that is formed with a plurality of first through holes, and a base pad that is formed with a plurality of second through holes, the needle portions of the needle units removably extending through the second and first through holes, the head portions of the needle units abutting against the base pad; a temperature monitor disposed between the base plate and the base pad; an upper unit disposed above the base pad and abutting against the head portions; and a clamp unit clamping and pressing the base unit against the upper unit.

Abstract: An electromagnetic thermotherapeutic apparatus includes: a plurality of needle units respectively having head portions and needle portions; a base unit having a base plate that is formed with a plurality of first through holes, and a base pad that is formed with a plurality of second through holes, the needle portions of the needle units removably extending through the second and first through holes, the head portions of the needle units abutting against the base pad; a temperature monitor disposed between the base plate and the base pad; an upper unit disposed above the base pad and abutting against the head portions; and a clamp unit clamping and pressing the base unit against the upper unit.

Abstract: A heat therapy for thermally treating a target tissue within a living body by using a treating apparatus including a treating device with a magnetic part is provided. The magnetic part is heated to a first temperature by a high frequency electromagnetic field with a heating rate ranging from 1 to 5° C./sec, wherein the magnetic part is contacted the target tissue. Temperature controlling steps are performed to the magnetic part having the first temperature, and therefore the magnetic part has a final temperature higher than the first temperature, and a treatment is performed to the target tissue under the final temperature. Each of the temperature controlling steps is a heating step, a cooling step or a temperature conservation step, and the magnetic part is heated or cooled by the high frequency electromagnetic field with a heating rate or a cooling rate ranging from 1 to 5° C./sec.

Abstract: A hemostatic applicator adapted to stop a bleeding site from bleeding is provided. The hemostatic applicator includes a magnetic part, an anti-adhesion layer and a non-magnetic part. The magnetic part is suitable to be heated to a temperature with a high frequency electromagnetic field. The anti-adhesion layer is formed on a surface of the magnetic part, and the magnetic part contacts the bleeding site through the anti-adhesion layer. The non-magnetic part is connected with the magnetic part. A hemostatic module is also provided.

Abstract: An electromagnetic thermotherapeutic apparatus includes a tubular needle and an inner needle. The tubular needle has an electromagnetic inductive portion that is made from a material capable of generating heat when subjected to an induction magnetic field, and that has a hollow tip, and a non-electromagnetic inductive portion that is connected to the electromagnetic inductive portion oppositely of the hollow tip. The inner needle is removably insertable into the tubular needle from the non-electromagnetic inductive portion to the hollow tip.