Abstract: A substrate processing apparatus comprises a chamber member that defines an interior volume that has an aspect ratio. The chamber member comprises a pair of laterally opposing inlet walls and a loading port. Each of the pair of laterally opposing inlet walls has an inlet port configured to receive output from a remote plasma source. The loading port is arranged between the pair of inlet walls, configured to allow passage of a substrate into the interior volume.

Abstract: A substrate processing apparatus, comprising: a processing chamber having a plasma intake wall configured to receive plasma from a remote plasma source (RPS) and a surrounding wall having an inner surface defining an interior volume for receiving a substrate; and a substrate support having a substrate supporting surface facing the plasma intake wall and elevatably arranged in the interior volume of the processing chamber. The surrounding wall, in a cross-section of the processing chamber, includes: a first segment having a first width associated with a processing region for the substrate support; a second segment having a width greater than the first width that is further away from the plasma intake wall than the first segment.

Abstract: A parallel-type coating apparatus for coating at least one object to be coated carried by a carrier includes a double-layer vacuum chamber having feed and discharge chambers opposite to each other in a Z-direction, and a plurality of process chambers for performing at least a fixed point coating on the at least one object to be coated. The double-layer vacuum chamber and the process chambers are arranged in two juxtaposed rows in a Y-direction transverse to the Z-direction. A feed lifting mechanism is disposed in one of the double-layer vacuum chamber 3 and the process chambers, and includes a feed lifting seat movable in the Z-direction. A plurality of first conveying devices are respectively disposed in the other ones of the process chambers for conveying the carrier. A method for coating a multilayer film on at least one object to be coated carried by a carrier is also disclosed.

Abstract: A diffusing plate includes a plate body including a rectangular hole-configuring region, a plurality of holes arranged in the rectangular hole-configuring region and arranged concentrically to form a first to an N-th rectangular patterns from an inside to an outside sequentially. Scales of the first to the N-th rectangular patterns are incrementally increased, and N is a positive integer. One portion of the holes are located in an area near a center of the rectangular hole-configuring region, another portion of the holes are located in four corner areas of the rectangular hole-configuring region, each of the holes has a diameter, and the diameter of the one portion of the holes is smaller than the diameter of the another portion of the holes.

Abstract: A substrate processing apparatus comprises a chamber member that defines an interior volume that has an aspect ratio. The chamber member comprises a pair of laterally opposing inlet walls and a loading port. Each of the pair of laterally opposing inlet walls has an inlet port configured to receive output from a remote plasma source. The loading port is arranged between the pair of inlet walls, configured to allow passage of a substrate into the interior volume.

Abstract: A substrate processing apparatus, comprising: a processing chamber having a plasma intake wall configured to receive plasma from a remote plasma source (RPS) and a surrounding wall having inner surface defining an interior volume for receiving a substrate; and a substrate support having a substrate supporting surface facing the plasma intake wall and elevatably arranged in the interior volume of the processing chamber. The surrounding wall, in a cross-section of the processing chamber, includes: a first segment having a first width associated with a processing region for the substrate support; a second segment having a width greater than the first width that is further away from the plasma intake wall than the first segment.

Abstract: A substrate carrier unit includes a substrate carrier and a phase transition material. The substrate carrier defines an isolated space therein. The phase transition material is filled into the isolated space of the substrate carrier and has a melting point ranging between 18° C. and 95° C. The phase transition material is capable of absorbing thermal energy from the substrate carrier as latent heat to change the phase from solid to liquid.

Abstract: A film deposition system includes a substrate carrier, a film deposition device, a transport device and a cooling device. The substrate carrier includes a carrier body that defines an isolated space therein, and a phase transition material that is filled into the isolated space and that has a melting point ranging between 18° C. and 95° C. The phase transition material is capable of absorbing thermal energy from the carrier body as latent heat to change the phase of the phase transition material from solid to liquid. The cooling device is configured to absorb thermal energy from the substrate carrier so as to change the phase of the phase transition material from liquid to solid.

Abstract: A double-valve device includes a base unit, two valve units and a transport unit. The base unit has a surrounding wall, an entrance wall connected to the surrounding wall and formed with an entrance opening, an exit wall connected to the surrounding wall oppositely of the entrance wall and formed with an exit opening, and a spacing wall disposed between the entrance and exit walls and formed with a pass-through opening. The surrounding wall, the entrance wall and the spacing wall cooperatively define a buffer chamber. The surrounding wall, the spacing wall and the exit wall cooperatively define a joint chamber. The valve units are respectively disposed in the buffer and joint chambers for respectively sealing and unsealing the entrance and pass-through openings.

Abstract: A substrate carrier unit includes a substrate carrier and a phase transition material. The substrate carrier defines an isolated space therein. The phase transition material is filled into the isolated space of the substrate carrier and has a melting point ranging between 18° C. and 95° C. The phase transition material is capable of absorbing thermal energy from the substrate carrier as latent heat to change the phase from solid to liquid.

Abstract: A film deposition system includes a substrate carrier, a film deposition device, a transport device and a cooling device. The substrate carrier includes a carrier body that defines an isolated space therein, and a phase transition material that is filled into the isolated space and that has a melting point ranging between 18° C. and 95° C. The phase transition material is capable of absorbing thermal energy from the carrier body as latent heat to change the phase of the phase transition material from solid to liquid. The cooling device is configured to absorb thermal energy from the substrate carrier so as to change the phase of the phase transition material from liquid to solid.

Abstract: Data from biometric images such as minutiae of a fingerprint are represented in coordinates x- and y-, and the direction of the ridge flow of the minutia ?; in vector sets of (x1, y1, ?1) are used in generating a 256-bit secret key in a secure manner in enrolling the fingerprint in the Enrolment Phase. The key generation algorithm includes random key generation, threshold signature scheme using polynomial functions, generating random fake minutiae vector sets to form a locked representation of the fingerprint. In the Query Phase, the fingerprint image used to re-generate the secret key is matched against the locked template representation through automatic alignment process using geometric hash table to compare the enrolled minutiae (genuine and fake) with the vector set extracted from the query minutiae sets, and adjustable transform equation is used for adjusting for the minutiae direction, etc.

Abstract: This invention relates to a rewritable optical information recording medium of the phase-change type, which is made of a Te—Ge—Sb—B quaternary alloy. The optical contrast of the recording medium according to the present invention is enhanced over 35% in the visible wavelength range of 350 nm to 800 nm. Hence, the CNR of an optical disk with the recording medium of the present invention is increased, and the recording medium is suitable for optical information record operated in shorter visible wavelength. In addition, since the crystallization of the recording medium according to the present invention is single-phase, the performance of the repeated recording and erasing is enhanced.