Abstract: In a method of manufacturing a semiconductor device, an n-type source/drain epitaxial layer and a p-type source/drain epitaxial layer respectively formed, a dielectric layer is formed over the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer, a first opening is formed in the dielectric layer to expose a part of the n-type source/drain epitaxial layer and a second opening is formed in the dielectric layer to expose a part of the p-type source/drain epitaxial layer, and the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer respectively recessed. A recessing amount of the n-type source/drain epitaxial layer is different from a recessing amount of the p-type source/drain epitaxial layer.

Abstract: An electrical connection structure is provided. The electrical connection structure includes a through hole, a first pad, a second pad and a conductive bridge. The through hole has a first end and a second end. The first pad at least partially surrounds the first end of the through hole and is electrically connected to a first circuit. The second pad is located at the second end of the through hole and is electrically connected to a second circuit. The conductive bridge is connected to the first pad and second pad through the through hole, thereby making the first and second circuits electrically connected to each other.

Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: A control apparatus for a motor having a rotor includes a resolver, a processor, a decoder, a sensor, and a motor driver. The resolver outputs waveforms sensed from a rotation of the rotor. The decoder generates an absolute angle signal and an incremental angle signal in response to the waveforms from the resolver and provides the absolute angle signal and the incremental angle signal to the processor. The sensor estimates a positioning angle of the rotor and provides an estimated angle signal in response to the positioning angle of the rotor to the processor. When one of the absolute angle signal, the incremental angle signal, and the estimated angle signal is transmitted to the processor, the processor executes a predetermined program associated with the respective absolute angle signal, the incremental angle signal, and the estimated angle signal, to control the motor driver to rotate the rotor.

Abstract: A control apparatus for a motor having a rotor includes a resolver, a processor, a decoder, a sensor, and a motor driver. The resolver outputs waveforms sensed from a rotation of the rotor. The decoder generates an absolute angle signal and an incremental angle signal in response to the waveforms from the resolver and provides the absolute angle signal and the incremental angle signal to the processor. The sensor estimates a positioning angle of the rotor and provides an estimated angle signal in response to the positioning angle of the rotor to the processor. When one of the absolute angle signal, the incremental angle signal, and the estimated angle signal is transmitted to the processor, the processor executes a predetermined program associated with the respective absolute angle signal, the incremental angle signal, and the estimated angle signal, to control the motor driver to rotate the rotor.