Abstract: A method of manufacturing a hybrid random access memory in a system-on-chip, including steps of providing a semiconductor substrate with a magnetoresistive random access memory (MRAM) region and a resistive random-access memory (ReRAM) region, forming multiple ReRAM cells in the ReRAM region on the semiconductor substrate, forming a first dielectric layer on the semiconductor substrate, wherein the ReRAM cells are in the first dielectric layer, forming multiple MRAM cells in the MRAM region on the first dielectric layer, and forming a second dielectric layer on the first dielectric layer, wherein the MRAM cells are in the second dielectric layer.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.

Abstract: The present invention provides an extract of Dendrobii Caulis with eye care effect, wherein the extract of Dendrobii Caulis has an active ingredient including a picrotoxane-type sesquiterpene. The present invention further provides a pharmaceutical composition with eye care and a use of an extract of Dendrobii Caulis for preparing a pharmaceutical composition with eye care effect.

Abstract: The present invention provides an extract of Dendrobii Caulis with eye care effect, wherein the extract of Dendrobii Caulis has an active ingredient comprising a picrotoxane-type sesquiterpene. The present invention further provides a pharmaceutical composition with eye care and a use of an extract of Dendrobii Caulis for preparing a pharmaceutical composition with eye care effect.

Abstract: The present invention provides an extract of Dendrobii Caulis with eye care effect, wherein the extract of Dendrobii Caulis has an active ingredient comprising a picrotoxane-type sesquiterpene. The present invention further provides a pharmaceutical composition with eye care and a use of an extract of Dendrobii Caulis for preparing a pharmaceutical composition with eye care effect.