Abstract: A manufacturing method of a SRAM memory device includes forming two transistors on a substrate, forming an inner dielectric layer covering the two transistors, forming contacts in the inner dielectric layer for coupling to source nodes of the two transistors, forming a metal interconnect structure on the inner dielectric layer, wherein a portion of an n-th metal layer of the metal interconnect structure is utilized as a lower metal layer, wherein n?1. An opening is formed in the metal interconnect structure to expose the lower metal layer, and then a capacitor is formed in the opening. The capacitor includes the lower metal layer, a first electrode layer, a dielectric layer, a second electrode layer, and an upper metal layer from bottom to top. The upper metal layer is a portion of an m-th metal layer of the metal interconnect structure, wherein m?n+1.

Abstract: Techniques for remote tracking may be realized as a method including: receiving tracking parameters comprising one or more restrictions, wherein each restriction of the one or more restrictions includes a property other than a position; monitoring a position of a client device; receiving location information for the monitored position of the client device, the location information including one or more properties other than position; and determining that the monitored position of the client device transgresses a restriction of the one or more restrictions, wherein the determination includes determining that location information of the monitored position satisfies a property of the restriction other than position.