Abstract: A method of manufacturing a semiconductor device includes forming first and second active regions; forming first to fifth gate electrodes, the second gate electrode being between the first and third gate electrodes, the fourth gate electrode being between the third and fifth gate electrodes; and selectively replacing at least one portion of at least one of the gate electrodes with an isolation dummy gate, including: replacing the first and fifth gate electrodes with first and second isolation dummy gates formed in trenches through the first and second active regions; and replacing a first portion of the third gate electrode overlying the second active region with a third isolation dummy gate formed in a first trench through the second active region, resulting in a second portion of the third gate over the first active region, and the third isolation dummy gate aligned with the second portion of the third gate.

Abstract: A wavelength converter includes a supporting substrate and a ferroelectric substrate, the ferroelectric substrate includes at least one waveguide facing the supporting substrate and at least one wavelength-filtering pattern positioned between the waveguide and the supporting substrate, the waveguide includes a plurality of inverted domains and non-inverted domains configured to convert an infrared light into a green light, and the infrared light emitted from the semiconductor laser enters the waveguide of the wavelength converter. For example, the wavelength-filtering pattern includes a Bragg grating.

Abstract: A wavelength converter includes a supporting substrate and a ferroelectric substrate, the ferroelectric substrate includes at least one waveguide facing the supporting substrate and at least one wavelength-filtering pattern positioned between the waveguide and the supporting substrate, the waveguide includes a plurality of inverted domains and non-inverted domains configured to convert an infrared light into a green light, and the infrared light emitted from the semiconductor laser enters the waveguide of the wavelength converter. For example, the wavelength-filtering pattern includes a Bragg grating.

Abstract: A wavelength converter structure comprises a supporting substrate, a ferroelectric substrate having at least one ridge waveguide including a plurality of periodic poled regions positioned on a first side of the ferroelectric substrate, and at least one controlling pattern positioned on a second side of the ferroelectric substrate. The ridge waveguide is joined to the supporting substrate via an adhesive, and the second side is opposite to the first side.