Patents by Inventor Yibin SONG

Yibin SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device and method for disturbance free 3D MRAM fabrication
    Patent number: 11257863
    Abstract: A magnetic random access memory includes a memory cell including a first fixed layer, a second fixed layer, and one or more free layers disposed between the first fixed layer and the second fixed layer. The first and second fixed layers are continuous layers and commonly shared by a plurality of memory cells. The magnetic random access memory has a relatively simple structure that not only reduces magnetic interference between memory cells, but also simplifies the fabrication process and increases the integration level.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: February 22, 2022
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Yibin Song, Zhuofan Chen
  • Magnetic random access memory and manufacture thereof
    Patent number: 10388697
    Abstract: A magnetic random access memory and its manufacturing method related to semiconductor techniques. The magnetic random access memory comprises a word line, a bit line, and a memory unit positioned between the word line and the bit line, wherein the memory unit comprises a fixture layer connecting the bit line, a free layer connecting the word line, and an insulation layer positioned between the fixture layer and the free layer. This magnetic random access memory has a simpler design than conventional devices and can be manufactured more easily, which improves the integrity of the manufacturing process.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: August 20, 2019
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Zhuofan Chen, Yibin Song, Haiyang Zhang
  • DEVICE AND METHOD FOR DISTURBANCE FREE 3D MRAM FABRICATION
    Publication number: 20180286917
    Abstract: A magnetic random access memory includes a memory cell including a first fixed layer, a second fixed layer, and one or more free layers disposed between the first fixed layer and the second fixed layer. The first and second fixed layers are continuous layers and commonly shared by a plurality of memory cells. The magnetic random access memory has a relatively simple structure that not only reduces magnetic interference between memory cells, but also simplifies the fabrication process and increases the integration level.
    Type: Application
    Filed: February 15, 2018
    Publication date: October 4, 2018
    Inventors: Yibin Song, Zhuofan Chen
  • MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURE THEREOF
    Publication number: 20180122855
    Abstract: A magnetic random access memory and its manufacturing method related to semiconductor techniques. The magnetic random access memory comprises a word line, a bit line, and a memory unit positioned between the word line and the bit line, wherein the memory unit comprises a fixture layer connecting the bit line, a free layer connecting the word line, and an insulation layer positioned between the fixture layer and the free layer. This magnetic random access memory has a simpler design than conventional devices and can be manufactured more easily, which improves the integrity of the manufacturing process.
    Type: Application
    Filed: October 31, 2017
    Publication date: May 3, 2018
    Inventors: Zhuofan CHEN, Yibin SONG, Haiyang ZHANG