Abstract: A device structure may be manufactured by forming a first copper-containing metal interconnect structure embedded in a first dielectric material layer; forming a second dielectric material layer over the first copper-containing metal interconnect structure and the first dielectric material layer; forming a cavity through the second dielectric material layer such that a surface segment of the first copper-containing metal interconnect structure is exposed underneath the cavity; converting a surface portion of the first copper-containing metal interconnect structure into a copper-based tunneling barrier layer; and forming a second copper-containing metal interconnect structure in the cavity on the copper-based tunneling barrier layer.

Abstract: A chip transferring system including a stage, a protection cover and a pick-and-place component is provided. The stage has a supporting region and is configured to support a workpiece by the supporting region. The protection cover includes a cover body configured to be located above the supporting region to cover the supporting region, wherein the cover body has an opening. The pick-and-place component is configured to pass through the opening of the cover body to pick a chip from the workpiece on the supporting region or place the chip to the workpiece on the supporting region. In addition, a protection cover and a chip transferring method are also provided.

Abstract: A wafer cleaning system including a stage, a defect inspection module and a defect remover is provided. The stage is configured to support a wafer. The defect inspection module is located above the stage and configured to detect a location of at least one defect on a surface of the wafer. The defect remover is located above the stage and configured to remove the at least one defect on the surface of the wafer according to the location of the at least one defect. In addition, a wafer detecting module and a wafer cleaning method are also provided.

Abstract: Semiconductor structures and methods of fabrication are provided. A semiconductor structure includes an interconnect structure lying over a semiconductor substrate and having a top metal feature; a pad lying over the interconnect structure; and an extended conductive line having a proximal end electrically connected to the pad and extending to a distal end, wherein the extended conductive line include a proximal portion extending in a first direction and a non-proximal portion extending in second direction transverse to the first direction, and wherein the extended conductive line is electrically connected to the top metal feature.

Abstract: A device structure may be manufactured by forming metal interconnect structures embedded in dielectric material layers over a substrate; forming active metal connection structures, primary dummy metal structures, and miniature dummy metal structures over a topmost dielectric material layer selected from the dielectric material layers, wherein the miniature dummy metal structures have a lesser height than the active metal connection structures and the primary dummy metal structures; and forming bonding pads over the active metal connection structures, the primary dummy metal structures, and the miniature dummy metal structures, wherein the active metal connection structures and the primary dummy metal structures are contacted by the bonding pads, and the miniature dummy metal structures are not contacted by any of the bonding pads.

Abstract: A semiconductor structure is disclosed that includes: a source region and a drain region in a substrate; a first gate structure disposed above a first channel region in the substrate and between the source region and the drain region wherein the first gate structure includes a first gate dielectric disposed above the first channel region and a first gate electrode disposed above the first gate dielectric; and a second gate structure disposed above a second channel region in the substrate and between the first gate structure and the drain region, wherein the first gate structure is disposed closer to the source region and the second gate structure is disposed closer to the drain region.

Abstract: A package includes a first die and a second die stacked vertically over one another. A first surface of the first die facing a second surface of the second die. The first die includes an ESD protection device. The ESD protection device includes a conductive pattern adjacent to the first surface of the first die and an interconnect structure connected to the conductive pattern and extending toward a first semiconductor substrate of the first die that is opposite to the first surface of the first die.

Abstract: A semiconductor die including a semiconductor substrate, an interconnect structure, a capacitor structure, a redistribution layer and a bonding structure is provided. The interconnect structure is disposed on the semiconductor substrate. The capacitor structure is disposed on the interconnect structure. The redistribution layer is disposed on and electrically connected to the interconnect structure. The bonding conductor is electrically and physically in contact with the capacitor structure at a sidewall of the bonding conductor, wherein the redistribution layer is located at a lower level than the bonding conductor.

Abstract: A semiconductor structure includes a die structure. The die structure includes: a substrate; a first dielectric layer over the substrate; a first conductive structure within the first dielectric layer; a first edge protection layer on an edge surface of the first die structure; and a first insulating layer laterally adjacent to the first edge protection layer, the first edge protection layer between the first insulating layer and the edge surface of the first die structure.

Abstract: Semiconductor structures and methods of fabrication are provided. A semiconductor structure includes a substrate comprising a device region and a dummy region; transistor devices disposed in the device region and respectively comprising source/drain features disposed on opposing sides of a first gate structure; dummy transistor devices disposed in the dummy device region and respectively comprising dummy source/drain features disposed on opposing sides of a second gate structure; and a conductive path formed by a conductive structure or conductive structures directly over and isolated from the dummy transistor devices in the dummy region.

Abstract: A transistor and a manufacturing method are provided. The transistor includes at least one gate electrode, a channel, a gate dielectric layer, a source and a drain. The channel is curved. A doping concentration of a first portion of the channel is different from a doping concentration of a second portion of the channel. The gate dielectric layer is disposed between the gate electrode and the channel. The source is connected to the channel. The drain is connected to the channel.

Abstract: A semiconductor structure including a semiconductor substrate, an interconnect structure and a bonding structure is provided. The interconnect structure is disposed on the semiconductor substrate. The interconnect structure includes an interconnect wiring distributed on a top surface of the interconnect structure. The bonding structure is disposed on and electrically connected to the interconnect structure. The bonding structure includes a bonding dielectric structure and a bonding conductor. The bonding dielectric structure is disposed on the top surface of the interconnect structure and covers the interconnect wiring. The bonding conductor is embedded in the bonding dielectric structure, wherein the bonding conductor lands on the top surface of the interconnect wiring and a first sidewall of the interconnect wiring.

Abstract: A semiconductor structure, including a first semiconductor structure, a second semiconductor structure, and a filling material is disclosed. The first semiconductor structure has a first surface and a second surface opposite to the first surface. The first semiconductor structure has a body portion and a semiconductor brim portion protruded from the body portion. The semiconductor brim portion is closer to the second surface. The second semiconductor structure is in contact with the first surface of the first semiconductor structure and bonded with the first semiconductor structure. The filling material surrounds the first semiconductor structure and is filled between the semiconductor brim portion and the second semiconductor structure. The filling material wraps around and covers the semiconductor brim portion, and a sidewall of the filling material is aligned with a sidewall of the second semiconductor structure.

Abstract: A semiconductor device includes a die stack. The die stack includes a first tier including a first die and a second tier disposed over the first tier and including a second die and a plurality of through vias, where the plurality of through vias penetrate through the second die and further extend into a part of the first tier to be electrically coupled to the first die.

Abstract: A reticle enclosure includes a first cover having a first outer surface and a first inner surface and a second cover having a second outer surface and a second inner surface. The first cover and the second cover are joined together. The first cover and the second cover form an internal space therebetween configured to include a reticle. A catalyst layer is disposed on the first inner surface of the first cover and a dehumidification layer is disposed on the second inner surface of the second cover.

Abstract: A photolithography apparatus and a method for operating the photolithography apparatus are provided. The method includes steps of receiving a reticle assembly comprising a reticle protected by a pellicle membrane; transporting the reticle assembly to an exposure tool and securing the reticle assembly on a reticle stage of the exposure tool; determining a scanning speed profile based on a risk level rupture of the pellicle membrane; and preforming an exposure operation by driving the reticle stage according to the scanning profile.

Abstract: A photolithography apparatus and a method for operating the photolithography apparatus are provided. The method includes steps of receiving a reticle assembly comprising a reticle protected by a pellicle membrane; transporting the reticle assembly to an exposure tool and securing the reticle assembly on a reticle stage of the exposure tool; determining a scanning speed profile based on a risk level rupture of the pellicle membrane; and preforming an exposure operation by driving the reticle stage according to the scanning profile.

Abstract: Hydrofluoric acid waste streams from semiconductor device manufacturing processes are collected and converted to cryolite utilizing disclosed systems and processes. The systems and processes are able to utilize hydrofluoric acid waste streams from multiple different sources. The systems and processes control delivery of reactant so that the produced cryolite has low impurity levels and meets industry standards.

Abstract: A semiconductor structure and a method of fabricating thereof including a substrate having a device region and a dummy region. The device region includes a number of N-type device cells having a plurality of operational N-type transistors and a number of P-type device cells having a plurality of operational P-type transistors. The dummy region includes a number of N-type dummy cells having a plurality of non-operational N-type transistors and a number of P-type dummy cells having a plurality of non-operational P-type transistors, and a total number of the N-type device cells and P-type device cells is equal to a total number of the N-type dummy cells and P-type dummy cells.

Abstract: A semiconductor structure and a method of fabricating thereof including a substrate having a device region and a dummy region. A first active region is disposed over the substrate in the device region and a second active region is over the substrate in the dummy region. A first operational gate structure over the first active region and a first non-operational gate structure over the second active region. A first epitaxial region of an n-type dopant is adjacent the first operation gate structure; and a second epitaxial region of an n-type dopant is adjacent the first non-operational gate structure.