Patents by Inventor Yi-Chen Shen

Yi-Chen Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11916471
    Abstract: An example electronic device includes a controller to determine a user touch detection by a power adaptor coupled to the electronic device to operate the electronic device in an AC power mode. The power adaptor may comprise a proximity sensor to detect a user touch for detachment of the power adaptor from the electronic device, and a control circuit to operate a configuration pin in a low output mode to signal user touch detection. The controller may initiate central processing unit (CPU) throttling to reduce power consumption by the electronic device. The controller may further stop CPU throttling in response to detecting that the power adaptor has been detached from the electronic device. Further, the controller may switch the electronic device to a DC power mode to operate using DC power supplied by a battery of the electronic device in response to power adaptor detachment.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: February 27, 2024
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Ting-Yang Tsai, Yi-Chen Chen, Ching-Lung Wang, Yu-Min Shen
  • Publication number: 20110163408
    Abstract: A Schottky diode structure with low reverse leakage current and low forward voltage drop has a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. A plurality of dot-shaped or line-shaped second conductive material regions are formed on the surface of the first conductive material semiconductor substrate connecting to the metal layer. The second conductive material regions form depletion regions in the first conductive material semiconductor substrate. The depletion regions can reduce the leakage current area of the Schottky diode, thereby reducing the reverse leakage current and the forward voltage drop. When the first conductive material is a P-type semiconductor, the second conductive material is an N-type semiconductor. When the first conductive material is an N-type semiconductor, the second conductive material is a P-type semiconductor.
    Type: Application
    Filed: January 6, 2010
    Publication date: July 7, 2011
    Inventors: Chiun-Yen Tung, Kun-Hsien Chen, Kai-Ying Wang, Hung Ta Weng, Yi-Chen Shen