Abstract: Embodiments of this application disclose an NFC-based communication method, an apparatus, and a system. In the NFC-based communication method, an electronic device works in an NFC reader/writer mode and performs an NFC communication process with an NFC tag. When failing to perform the NFC communication process, the electronic device may adjust a currently used radio frequency parameter, and re-perform the NFC communication process with the NFC tag by using an adjusted radio frequency parameter.

Abstract: The present disclosure provides a lower electrode assembly and a plasma processing device in which the lower electrode assembly is located. The lower electrode assembly includes a base, including a main part and a step part extending outwardly from the main part, the step part being provided with a screw hole; a dielectric ring, disposed on the step part around the main part, a groove being formed in a bottom of the dielectric ring, and an opening of the groove being able to cover an opening of the screw hole; and a screw, having a head being located in the groove. By forming the groove inside the dielectric ring at an outer edge of the base, the head of the screw fixing the base is arranged in the groove so as to reduce a diameter of the hole formed in the base, so that an edge of the screw hole can be completely covered by the dielectric ring, and since the dielectric ring is made of an insulating material, a technical effect of avoiding arcing at the edge of the screw hole can be achieved.

Abstract: The present invention belongs to the technical field of underwater communication, and provides a novel highly robust underwater optical communication system which comprises a sending module and a receiving module. The novel highly robust underwater optical communication system realizes highly robust underwater optical communication under strong interference of sunlight and artificial light sources. The system uses a new physical method irrelevant to frequency, and can be used with existing MIMO and CDMA to obtain better communication effects. The circularly polarized light is used for signal transmission, thereby avoiding the problem of channel misalignment caused by the rotation of a platform underwater. At the same time, good polarization maintaining of a marine environment makes the signal characteristics difficult to lose.

Abstract: Disclosed are a plasma reactor for ultra-high aspect ratio etching and an etching method therefor, wherein the plasma reactor comprises: a reaction chamber inside which a reaction space is formed; a base disposed at the bottom of the reaction space and configured for supporting a to-be-processed substrate; a gas showerhead disposed at the top inside the reaction chamber; wherein a first radio frequency power supply outputs a radio frequency power with a first frequency to the base or the gas showerhead so as to form and maintain plasma in the reaction chamber; and a second radio frequency power supply which outputs a radio frequency power with a second frequency to the base so as to control the ion energy incident to the base; wherein the first frequency is not less than 4 MHz, and the second frequency is not less than 10 KHz but not more than 300 KHz.

Abstract: The present invention belongs to the technical field of underwater communication, and provides a novel highly robust underwater optical communication system which comprises a sending module and a receiving module. The novel highly robust underwater optical communication system realizes highly robust underwater optical communication under strong interference of sunlight and artificial light sources. The system uses a new physical method irrelevant to frequency, and can be used with existing MIMO and CDMA to obtain better communication effects. The circularly polarized light is used for signal transmission, thereby avoiding the problem of channel misalignment caused by the rotation of a platform underwater. At the same time, good polarization maintaining of a marine environment makes the signal characteristics difficult to lose.

Abstract: Disclosed are a plasma reactor for ultra-high aspect ratio etching and an etching method therefor, wherein the plasma reactor comprises: a reaction chamber inside which a reaction space is formed; a base disposed at the bottom of the reaction space and configured for supporting a to-be-processed substrate; a gas showerhead disposed at the top inside the reaction chamber; wherein a first radio frequency power supply outputs a radio frequency power with a first frequency to the base or the gas showerhead so as to form and maintain plasma in the reaction chamber; and a second radio frequency power supply which outputs a radio frequency power with a second frequency to the base so as to control the ion energy incident to the base; wherein the first frequency is not less than 4 MHz, and the second frequency is not less than 10 KHz but not more than 300 KHz.