Abstract: Disclosed is a turbine vane thermal barrier coating working condition simulation experiment test system, including: a working state simulation device, a service environment simulation device and a detection device. The working state simulation device is provided on one side of the turbine vane thermal barrier coating to be tested, is connected to the turbine vane thermal barrier coating to be tested, and is configured to simulate a high-speed rotation working state of the turbine vane thermal barrier coating to be tested. The service environment simulation device is provided on the other side of the turbine vane thermal barrier coating to be tested. The detection device is configured to detect damage generated when the turbine vane thermal barrier coating to be tested rotates at a high speed in the service environment.

Abstract: Disclosed in the present application are a non-volatile ferroelectric capacitor and a display driving circuit. The non-volatile ferroelectric capacitor comprises: a ferroelectric capacitor, which is formed on the surface of a substrate; and a first channel layer and a second channel layer, which are respectively formed on the surface of the substrate. The ferroelectric capacitor comprises a bottom electrode, a ferroelectric thin film and a top electrode, which are sequentially arranged in a stacked manner; the first channel layer is in contact with the bottom electrode; a dielectric material is formed on the surfaces of the ferroelectric capacitor, the first channel layer and the second channel layer; and a first gate electrode and a second gate electrode are formed on the surface of the dielectric material, such that the structure of the ferroelectric capacitor is obtained.

Abstract: A ferroelectric film phase shifter includes a substrate layer; an isolated signal layer located on the substrate layer; first, second and third top transmission line electrodes distributed on the isolated signal layer at intervals; the first and second top transmission line electrodes located at both ends of the isolated signal layer, and the third top transmission line electrode located on a middle region of the isolated signal layer; a bottom transmission line electrode located in the isolated signal layer; an intermediate transmission line structure located in a middle region of the bottom transmission line electrode and adjacent to the third top transmission line electrode; MIM hafnium oxide-based ferroelectric capacitor structures located at two ends of the bottom transmission line electrode; and metal transmission line structures located between each MIM hafnium oxide-based ferroelectric capacitor structure and each of the first top transmission line electrode and the second top transmission line electr

Abstract: A gate-last ferroelectric field effect transistor includes a substrate, isolation regions, a gate structure, a side wall spacer, source and drain regions, a first metal silicide layer and an interlayer dielectric layer which are sequentially arranged from bottom to top; the present disclosure further provides a manufacturing method of a gate-last ferroelectric field effect transistor; according to structural characteristics of the gate-last ferroelectric field effect transistor and crystalline characteristics of a hafnium oxide-based ferroelectric film, a dummy gate is first introduced in a manufacturing process of the gate-last ferroelectric field effect transistor; afterwards, high-temperature annealing is performed to make sure that an unannealed hafnium oxide-based film is crystallized to form a ferroelectric phase; finally the dummy gate is removed and a gate electrode layer is deposited to meet performance requirements of the gate-last ferroelectric field effect transistor; and the gate-last ferroelectr

Abstract: A NAND ferroelectric memory cell with a three-dimensional structure and a preparation method thereof are provided, the ferroelectric memory cell comprises: an oxide insulating layer, a channel layer, a channel buffer layer, a ferroelectric layer, and/or a gate buffer layer, and a gate arranged successively from the inside to the outside. In the memory cell of the present disclosure, the buffer layer has the following effects: 1. It can induce the crystallization of ferroelectric film to form ferroelectric phase; 2. It can reduce adverse effects caused by different crystalline characteristics of the channel layer and the ferroelectric layer, improve the quality and uniformity of the deposited film; 3. It can enhance the interface property of the channel layer, reduce leakage current, and enhance endurance of the device. Therefore, the buffer layer can improve the overall storage property and homogeneity of memory cells with a three-dimensional structure.

Abstract: An observable micro-nano mechanical testing apparatus and an observable micro-nano mechanical testing method are provided. The apparatus includes a supporting component, a driving component, a bearing component and an imaging component. The driving component and the imaging component are respectively vertically arranged on the supporting component, the bearing component is horizontally arranged on the supporting component and positioned below the driving component and the imaging component, the bearing component is used for bearing a sample and moving the sample, the driving component is used for driving an indenter to apply loads on the sample so as to form an indentation on the sample, and the imaging component is used for observing and analyzing the indentation on the sample.

Abstract: A load control method and a load control system of an indenter based on fuzzy predictive control, are provided. The method includes acquiring an actual measured force value of a sensor and an expected force value of the nth cycle in the loading stage; calculating a first error and a change rate; establishing and optimizing a fuzzy predictive controller; determining movement steps of a motor in the loading stage; acquiring the actual measured value of the sensor and an expected force value of the nth cycle in the full load stage; controlling the movement of the motor; acquiring the actual measured force value of the sensor and an expected force value of the nth cycle in the unloading stage; calculating a third error and a change rate; and determining the movement steps of the motor in the unloading stage.

Abstract: A hafnium oxide-based ferroelectric field effect transistor includes a substrate, an isolation region arranged around the substrate; a gate structure including a buffer layer, a floating gate electrode, a hafnium oxide-based ferroelectric film layer, a control gate electrode and a film electrode layer which are sequentially stacked from bottom to top at a middle part of an upper surface of the substrate, a side wall arranged outside the gate structure, a source region and a drain region arranged oppositely at two sides of the gate structure and are formed by extending from an inner side of the isolation region to the middle part of the substrate, a first metal silicide layer formed by extending from the inner side of the isolation region to the side wall, and a second metal silicide layer arranged on an upper surface of the gate structure.

Abstract: A load control method of an indenter based on fuzzy predictive control and a system, acquiring the actual measured force value of a sensor in the loading stage; acquiring the expected force value of the nth cycle in the loading stage; calculating a first error and a change rate; establishing and optimizing a fuzzy predictive controller; determining the movement steps of a motor in the loading stage; acquiring the actual measured value of the sensor in the full load stage; acquiring the expected force value of the nth cycle in the full load stage and calculating a second error; controlling the movement of the motor; acquiring the actual measured force value of the sensor in the unloading stage; acquiring the expected force value of the nth cycle in the unloading stage; calculating a third error and a change rate; determining the movement steps of the motor in the unloading stage.

Abstract: The present disclosure discloses an observable micro-nano mechanical testing apparatus and method. The apparatus includes a supporting component, a driving component, a bearing component and an imaging component. The driving component and the imaging component are respectively vertically arranged on the supporting component, the bearing component is horizontally arranged on the supporting component and positioned below the driving component and the imaging component, the bearing component is used for bearing a sample and moving the sample, the driving component is used for driving an indenter to apply loads on the sample so as to form an indentation on the sample, and the imaging component is used for observing and analyzing the indentation on the sample. Based on the testing method conducted by the testing apparatus in the present disclosure, mechanical property parameters of materials can be effectively measured; the structure is simple; and accuracy of measurement results is high.

Abstract: A NAND ferroelectric memory cell with a three-dimensional structure and a preparation method thereof are provided, the ferroelectric memory cell comprises: an oxide insulating layer, a channel layer, a channel buffer layer, a ferroelectric layer, and/or a gate buffer layer, and a gate arranged successively from the inside to the outside. In the memory cell of the present disclosure, the buffer layer has the following effects: 1. It can induce the crystallization of ferroelectric film to form ferroelectric phase; 2. It can reduce adverse effects caused by different crystalline characteristics of the channel layer and the ferroelectric layer, improve the quality and uniformity of the deposited film; 3. It can enhance the interface property of the channel layer, reduce leakage current, and enhance endurance of the device. Therefore, the buffer layer can improve the overall storage property and homogeneity of memory cells with a three-dimensional structure.

Abstract: A hafnium oxide-based ferroelectric field effect transistor includes a substrate, an isolation region arranged around the substrate; a gate structure including a buffer layer, a floating gate electrode, a hafnium oxide-based ferroelectric film layer, a control gate electrode and a film electrode layer which are sequentially stacked from bottom to top at a middle part of an upper surface of the substrate, a side wall arranged outside the gate structure, a source region and a drain region arranged oppositely at two sides of the gate structure and are formed by extending from an inner side of the isolation region to the middle part of the substrate, a first metal silicide layer formed by extending from the inner side of the isolation region to the side wall, and a second metal silicide layer arranged on an upper surface of the gate structure.

Abstract: A gate-last ferroelectric field effect transistor includes a substrate, isolation regions, a gate structure, a side wall spacer, source and drain regions, a first metal silicide layer and an interlayer dielectric layer which are sequentially arranged from bottom to top; the present disclosure further provides a manufacturing method of a gate-last ferroelectric field effect transistor; according to structural characteristics of the gate-last ferroelectric field effect transistor and crystalline characteristics of a hafnium oxide-based ferroelectric film, a dummy gate is first introduced in a manufacturing process of the gate-last ferroelectric field effect transistor; afterwards, high-temperature annealing is performed to make sure that an unannealed hafnium oxide-based film is crystallized to form a ferroelectric phase; finally the dummy gate is removed and a gate electrode layer is deposited to meet performance requirements of the gate-last ferroelectric field effect transistor; and the gate-last ferroelectr

Abstract: Disclosed is a turbine vane thermal barrier coating working condition simulation experiment test system, including: a working state simulation device, a service environment simulation device and a detection device. The working state simulation device is provided on one side of the turbine vane thermal barrier coating to be tested, is connected to the turbine vane thermal barrier coating to be tested, and is configured to simulate a high-speed rotation working state of the turbine vane thermal barrier coating to be tested. The service environment simulation device is provided on the other side of the turbine vane thermal barrier coating to be tested. The detection device is configured to detect damage generated when the turbine vane thermal barrier coating to be tested rotates at a high speed in the service environment.

Abstract: A method for evaluating an application effect of a thermal barrier coating for a turbine vane comprises: performing a preset program for calculation according to distribution of temperature fields of two computational domains for the thermal barrier coating and the turbine vane without the thermal barrier coating as well as maximum principal stress and maximum shear stress data of a stress field of the thermal barrier coating to obtain heat insulation efficiency of the thermal barrier coating, so as to obtain a local comprehensive evaluation factor and a global comprehensive evaluation factor of the thermal barrier coating. In the present invention, a simulation method of the thermal barrier coating for the three-dimensional turbine vane having a gas film hole is realized; and an evaluation parameter for the application effect of the thermal barrier coating is established.

Abstract: A type of testing equipment for detecting the failure process of thermal barrier coating in a simulated working environment; it belongs to the field of simulated special working environment equipment. Testing equipment includes testing platform equipped with static or dynamic specimen holding apparatus, simulated module of working environment, real-time detection module, control panel. This invention is capable of simulating a high temperature, erosive, corrosive working environment for thermal barrier coated turbine blade of aero-engines; simulate high speed spinning working environment for thermal coated blade, simulate static working environment for guiding blade; perform real-time testing of temperature field, 3-D displacement field, crack initiation and expansion, surface oxidation, etc.

Abstract: A type of testing equipment for detecting the failure process of thermal barrier coating in a simulated working environment; it belongs to the field of simulated special working environment equipment. Testing equipment includes testing platform equipped with static or dynamic specimen holding apparatus, simulated module of working environment, real-time detection module, control panel. This invention is capable of simulating a high temperature, erosive, corrosive working environment for thermal barrier coated turbine blade of aero-engines; simulate high speed spinning working environment for thermal coated blade, simulate static working environment for guiding blade; perform real-time testing of temperature field, 3-D displacement field, crack initiation and expansion, surface oxidation, etc.