Abstract: Provided is a semiconductor package including a redistribution layer, a three-dimensional integrated circuit (3D IC) structure on the redistribution layer, a plurality of conductive posts on the redistribution layer adjacent to the 3D IC structure, a molding material on the redistribution layer and encapsulating the 3D IC structure and the plurality of conductive posts, and a printed circuit board (PCB) on the molding material.

Abstract: A semiconductor package includes: a front side redistribution layer; a three-dimensional integrated circuit (3D IC) structure on the front side redistribution layer, the 3D IC structure including a first semiconductor chip die having through-silicon vias (TSVs) and a second semiconductor chip die disposed on the first semiconductor chip die, and the second semiconductor chip die being electrically coupled with the front side redistribution layer by the through-silicon vias (TSVs); a plurality of connection members between the first semiconductor chip die and the second semiconductor chip die; an insulating member disposed between the first semiconductor chip die and the second semiconductor chip die to surround the plurality of connection members; a molding material disposed on the front side redistribution layer to encapsulate the first semiconductor chip die, the second semiconductor chip die, and the insulating member; and a back side redistribution layer disposed on the molding material.

Abstract: A semiconductor package includes: a first redistribution layer; at least one lower die on the first redistribution layer; a first through-via on the first redistribution layer; a first molding material that molds the first redistribution layer, the at least one lower die, and the first through-via; a second redistribution layer on the at least one lower die, the first through-via, and the first molding material; at least one upper die on the second redistribution layer and having a thickness between 1.2 and 1.7 times, including endpoints, greater than a thickness of the at least one lower die; a second through-via on the second redistribution layer; a second molding material that molds the second redistribution layer, the at least one upper die, and the second through-via; and a heat dissipation member on the at least one upper die and the second through-via, wherein the heat dissipation member contacts the second through-via.

Abstract: A fan-out semiconductor package includes: a semiconductor chip; a redistribution portion disposed below the semiconductor chip; a reinforcing member disposed on the redistribution portion and surrounding the semiconductor chip; and an encapsulant disposed on the redistribution portion to embed the semiconductor chip and the reinforcing member therein.