Patents by Inventor Yifan NIE

Yifan NIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ionic barristor
    Patent number: 9812568
    Abstract: A Schottky barrier device is provided herein that includes a TMD layer on a substrate, a graphene layer on the TMD layer, an electrolyte layer on the TMD layer, and a source gate contact on the electrolyte layer. A drain contact can be provided on the TMD layer and a source contact can be provided on the graphene layer. As ionic gating from the source gate contact and electrolyte layer is used to adjust the Schottky barrier height this Schottky barrier device can be referred to as an ionic control barrier transistor or “ionic barristor”.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: November 7, 2017
    Assignee: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Kyeongjae Cho, Yifan Nie, Suklyun Hong, Robert M. Wallace
  • IONIC BARRISTOR
    Publication number: 20170229576
    Abstract: A Schottky barrier device is provided herein that includes a TMD layer on a substrate, a graphene layer on the TMD layer, an electrolyte layer on the TMD layer, and a source gate contact on the electrolyte layer. A drain contact can be provided on the TMD layer and a source contact can be provided on the graphene layer. As ionic gating from the source gate contact and electrolyte layer is used to adjust the Schottky barrier height this Schottky barrier device can be referred to as an ionic control barrier transistor or “ionic barristor”.
    Type: Application
    Filed: February 4, 2016
    Publication date: August 10, 2017
    Inventors: Kyeongjae CHO, Yifan NIE, Suklyun HONG, Robert M. WALLACE