Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A plurality of capacitor-switch pairs is coupled between the reset transistor and a bias voltage source. Each of the plurality of capacitor-switch pairs includes a lateral overflow integration capacitor (LOFIC) and a switch transistor coupled to the LOFIC.

Abstract: A dark-current-inhibiting image sensor includes a semiconductor substrate, a thin and a thin junction. The semiconductor substrate includes a front surface, a back surface opposite the front surface, a photodiode, and a concave surface between the front surface and the back surface. The concave surface extends from the back surface toward the front surface, and defines a trench that surrounds the photodiode in a cross-sectional plane parallel to the back surface. The thin junction extends from the concave surface into the semiconductor substrate, and is a region of the semiconductor substrate. The semiconductor substrate includes a first substrate region, located between the thin junction and the photodiode, that has a first conductive type. The photodiode and the thin junction have a second conductive type opposite the first conductive type.

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network is coupled between the reset transistor and a bias voltage source. The LOFIC network includes a main LOFIC coupled between the reset transistor and the bias voltage source, and a plurality of subordinate capacitor-switch pairs, each including a subordinate LOFIC and a switch transistor coupled to the subordinate LOFIC. Each of the plurality of subordinate capacitor-switch pairs is coupled between the reset transistor and the bias voltage source.

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A plurality of capacitor-switch pairs is coupled between the reset transistor and a bias voltage source. Each of the plurality of capacitor-switch pairs includes a lateral overflow integration capacitor (LOFIC) and a switch transistor coupled to the LOFIC.

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network is coupled between the reset transistor and a bias voltage source. The LOFIC network includes a main LOFIC coupled between the reset transistor and the bias voltage source, and a plurality of subordinate capacitor-switch pairs, each including a subordinate LOFIC and a switch transistor coupled to the subordinate LOFIC. Each of the plurality of subordinate capacitor-switch pairs is coupled between the reset transistor and the bias voltage source.

Abstract: A pixel circuit includes a transfer transistor is coupled between a photodiode and a floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A lateral overflow integration capacitor (LOFIC) includes an insulating region between a first metal electrode and a second metal electrode that is coupled to a first reset transistor and selectively coupled to the floating diffusion. A second reset transistor and a bias voltage source are coupled to the first metal electrode. During an idle period, the first reset transistor is configured to be on, the second reset transistor is configured to be off, and the bias voltage source is configured to provide a first bias voltage to the first metal electrode to reverse bias the LOFIC. The first bias voltage is less than a reset voltage provided from the reset voltage source.

Abstract: A dark-current-inhibiting image sensor includes a semiconductor substrate, a thin and a thin junction. The semiconductor substrate includes a front surface, a back surface opposite the front surface, a photodiode, and a concave surface between the front surface and the back surface. The concave surface extends from the back surface toward the front surface, and defines a trench that surrounds the photodiode in a cross-sectional plane parallel to the back surface. The thin junction extends from the concave surface into the semiconductor substrate, and is a region of the semiconductor substrate. The semiconductor substrate includes a first substrate region, located between the thin junction and the photodiode, that has a first conductive type. The photodiode and the thin junction have a second conductive type opposite the first conductive type.