Abstract: The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.

Abstract: The present disclosure provides a gate line structure of a solar cell and a solar cell applying same. The structure comprises a plurality of main gate lines extending along a first direction and arranged at intervals along a second direction, and a plurality of thin gate lines extending along the second direction and arranged at intervals along the first direction, wherein the first direction and the second direction are not parallel, the plurality of main gate lines are electrically connected to the plurality of thin gate lines respectively, and between any two adjacent main gate lines, each thin gate line has a disconnected section. According to the gate line structure of a solar cell and a solar cell applying same of the present disclosure, silver paste consumption can be effectively reduced while ensuring cell efficiency, reducing the preparation costs of a solar cell.

Abstract: A solar cell comprises a substrate having an opposite first surface and a second surface, and the second surface has a first regions and a second regions adjacent in the first direction; a first passivation layer located on the first surface; a first doped layer and a tunnel oxide layer sequentially stacked in the first region; a first insulating layer located on a surface of the first doped layer away from the substrate; a second passivation layer located in the second region and extending to a surface of the first insulating layer away from the substrate; a second doped layer located on a surface of the second passivation layer away from the substrate, and a second insulating layer located between the second passivation layer and the first doped layer, the tunnel oxide layer in the first direction, a surface of the second insulating layer away from the substrate contacting with the first insulating layer.

Abstract: The present disclosure provides a hybrid solar battery, composing of: a first surface and a second surface opposing to each other, and the hybrid solar battery is further composed of a silicon substrate; a tunneling layer located between the silicon substrate and the first surface; and an intrinsic amorphous silicon layer is located between the silicon substrate and the second surface. The hybrid solar battery and photovoltaic module proposed in this disclosure can reduce the parasitic absorption of the film layer the production cost on the basis of improving the conversion efficiency of the battery.

Abstract: The present application provides a large-area perovskite layer and a preparation method thereof. The preparation method includes: dissolving raw materials of a perovskite in an ionic liquid or in a mixture of the ionic liquid and an organic solvent, thereby forming a perovskite precursor, and coating the perovskite precursor onto a surface of a crystalline silicon bottom cell, thereby forming the perovskite layer.

Abstract: A solar cell includes a semiconducting substrate, a first emitter, and a second emitter. The semiconducting substrate includes first and second surfaces. The semiconducting substrate includes first and second regions. The first direction is perpendicular to the thickness direction of the semiconducting substrate. The first emitter is in a first conductivity type. The first emitter is disposed on the first surface and including a groove. The groove divides the first emitter into a first sub-emitter and a second sub-emitter. The first sub-emitter is located on the first region. The second sub-emitter is located on the second region. The second emitter is in a second conductivity type, and the second emitter is disposed on the first surface and located on the second region. The minimum distance between the second emitter and the second surface is less than the minimum distance between the first emitter and the second surface.

Abstract: The present disclosure provides a texture structure of a solar cell and a preparation method therefor. The texture structure includes a texture with a surface including a contact region and a non-contact region. The contact region is provided with a metal gate line, and has a specific surface area smaller than the non-contact region. According to the texture structure of a solar cell and the preparation method therefor provided by the present disclosure, the texture of a metal gate line coverage region and the texture of a metal gate line non-coverage region form different microscopic appearances of texture structure, and the texture structure in the non-coverage region has a specific surface area much larger than the texture structure in the coverage region, thereby reducing a contact area between a slurry metal and a PN junction on the texture, reducing the metal recombination by more than 20%, and improving the conversion efficiency.

Abstract: The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.

Abstract: The present disclosure relates to a heterojunction cell and a manufacturing method thereof, a photovoltaic module and a photovoltaic system. The heterojunction cell includes: a substrate; a first intrinsic silicon layer, a first doped layer, and a first transparent conductive layer that are sequentially stacked on a first surface; and a second intrinsic silicon layer, a second doped layer, and a second transparent conductive layer that are sequentially stacked on a second surface. A doping type of the first doped layer is opposite to a doping type of the second doped layer. The first transparent conductive layer covers at least part of the first surface. The second transparent conductive layer covers the second surface and at least part of the plurality of lateral surfaces. An edge of the first transparent conductive layer is spaced apart from an edge of the second transparent conductive layer, to define an isolation region therebetween.

Abstract: A solar cell structure, a method for preparing a solar cell, and a mask plate. The solar cell structure includes a substrate, a first doped layer, and a plurality of first transparent conductive layers. The first doped layer is disposed on a surface of the substrate. The plurality of first transparent conductive layers are spaced apart from each other and disposed on a surface of the first doped layer away from the substrate. A region to be cut of the solar cell structure is located between two adjacent first transparent conductive layers.

Abstract: A solar cell includes: a substrate including a first surface and a second surface arranged opposite to each other and a plurality of lateral surfaces adjacent to and located between the first surface and the second surface; a plurality of pyramid base shaped textured structures being constructed on the second surface and each of the lateral surfaces, wherein a minimum side length of each of top surfaces of the pyramid base shaped textured structures arranged on the lateral surfaces is L1, a maximum side length of each of top surfaces of the pyramid base shaped textured structures arranged on the second surface is L2, and L1>L2; a doped conductive layer arranged on the first surface; and a passivated contact layer including a polysilicon doped conductive layer, the passivated contact layer being arranged on the second surface.

Abstract: A method for preparing a solar cell is provided. The method includes providing a N-type silicon substrate; depositing a tunnel passivation structure on the first surface of the N-type silicon substrate, and then depositing a mask layer on the tunnel passivation structure; cleaning the second surface of the N-type silicon substrate; performing boron diffusion treatment on the cleaned second surface of the N-type silicon substrate and annealing treatment on the tunnel passivation structure in the same environment, so that a first emitter layer is formed on the second surface of the N-type silicon substrate and the tunnel passivation structure is crystallized; performing laser patterning treatment on the first emitter layer to form a second emitter region; depositing a passivation and anti-reflection film; and forming a first electrode and a second electrode.

Abstract: The present application relates to a transfer printing assembly, a solar cell, and a preparation method thereof. The transfer printing assembly includes a carrier and a first conducting wire. The carrier includes a first surface having a first groove. The first conducting wire is at least partially disposed within the first groove. The first conducting wire and a wall of the first groove define a first receiving cavity at a side of the first conducting wire adjacent to an opening of the first groove. The first receiving cavity is configured to accommodate slurry material. The first conducting wire is detachable from the first groove under an action of external energy.

Abstract: The present disclosure provides a passivation contact structure for a solar cell and a manufacturing method therefor and a solar cell using the passivation contact structure. The passivation contact structure comprises a tunnel layer; a transparent conductive film, located on the tunnel layer and in contact with the tunnel layer; a cover layer, located on the transparent conductive film; and a metal electrode, passing through the cover layer to be in contact with the transparent conductive film, the end surface of metal electrode being located in the transparent conductive film. According to the passivation contact structure for the solar cell, the manufacturing method therefor, and the solar cell using the passivation structure of the present disclosure, both electricity conducting and passivation effects can be achieved, and the effect of reducing the loss of light absorption can also be achieved.

Abstract: A controller including a controller body with a main body portion and a support-panel portion extending sideway from the main body portion. The support-panel portion has a backing-surface with an edge segment demarcating a boundary between the main body portion and the support-panel portion. The controller including an extension unit slidable with respect to the support-panel portion along a sliding axis parallel to the backing-surface. The extension unit including an extension arm, and a stopper member at an outer end of the extension arm. The extension arm is retractably extendable from the support-panel portion along the sliding axis. The stopper member is retractably extendable from the outer end of the extension arm along an extension axis perpendicular to the backing surface. The stopper member including an overhang portion. The stopper member operable to clamp the portable electronic device along a thickness direction of the portable electronic device.

Abstract: A back-contact solar cell comprises a silicon substrate having a front surface and a back surface opposite to each other, and the silicon substrate is of a first doping type; and a first emitter, a first isolation region, a second isolation region, and a second emitter disposed on the back surface of the silicon substrate, wherein the first isolation region and the second isolation region are disposed between the first emitter and the second emitter in a first direction, the first emitter is of a second doping type, the first isolation region and the second emitter are of the first doping type, and the first direction intersects a thickness direction of the silicon substrate.

Abstract: A back contact solar cell comprises a silicon substrate which has a front surface and a back surface that opposed to each other, the silicon substrate is a first doping type; a first emitter and a second emitter are arranged on the back surface of the silicon substrate; the first emitter is of the second doping type, the second emitter is of the first doping type. The back contact solar cell further comprises a second isolation region surrounds a first isolation region, and the second isolation region surrounds the second emitter; comprising a second electrode which has a first part and a second part, a first part of is in contact with the second emitter, a second part of the second electrode is provided on a side of the corresponding the first emitter away from the silicon substrate, the first isolation region surrounds the first part of the second electrode, or the entire second electrode is in contact with the second emitter, and the first isolation region surrounds the entire second electrode.

Abstract: The present application provides an emitter, a selective emitter cell preparation method and a selective emitter cell. The preparation method for the selective emitter cell comprises: sequentially irradiating a boron-rich layer using lasers of at least two different wavelengths, and sequentially doping boron atoms in the boron-rich layer to the same region of a silicon wafer by means of a laser, to obtain the emitter.

Abstract: A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.

Abstract: A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.