Abstract: An electro-static discharge protection circuit including a first-LDNMOS transistor, a second-LDNMOS transistor, a first-resistor, and a gate-driven resistance is provided. The drain of the first-LDNMOS transistor is served as an electro-static input end, the P-body and source of the first-LDNMOS transistor are connected to each other. A coupling-voltage signal determines whether the first-LDNMOS transistor is turned on or not. The drain, P-body, and gate of the second-LDNMOS transistor are respectively connected to the drain of the first-LDNMOS transistor, the source of the first-LDNMOS transistor, and a common-ground potential. The first-resistor is connected between the source of the first-LDNMOS transistor and the common-ground potential.

Abstract: A tape carrier package has a chip, a tape carrier and sealing material. The chip has an active surface on which a plurality of bump electrodes are centrally arranged in two rows. The tape carrier has a device hole smaller than the chip, and has a plurality of leads each of which is divided into inner lead and outer lead. The inner leads are routed inward the center of the device hole and connected to the bump electrodes, respectively. The sealing material encapsulates the active surface of the chip and the inner leads, with the outer leads being exposed.

Abstract: A tape carrier package has a chip, a tape carrier and sealing material. The chip has an active surface on which a plurality of bump electrodes are centrally arranged in two rows. The tape carrier has a device hole smaller than the chip, and has a plurality of leads each of which is divided into inner lead and outer lead. The inner leads are routed inward the center of the device hole and connected to the bump electrodes, respectively. The sealing material encapsulates the active surface of the chip and the inner leads, with the outer leads being exposed.