Abstract: An electronic package is provided, in which a first electronic element and a second electronic element stacked on each other are embedded in a cladding layer, a circuit structure electrically connected to the second electronic element is formed on the cladding layer, and a passive element and a package module are disposed on the circuit structure, so as to shorten the transmission distance of electrical signals between the package module and the second electronic element.

Abstract: An interconnect structure comprises a first dielectric layer, a first metal layer, a second dielectric layer, a metal via, and a second metal layer. The first dielectric layer is over a substrate. The first metal layer is over the first dielectric layer. The first metal layer comprises a first portion and a second portion spaced apart from the first portion. The second dielectric layer is over the first metal layer. The metal via has an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first metal layer, and a lower portion in the first dielectric layer. The second metal layer is over the metal via. From a top view the second metal layer comprises a metal line having longitudinal sides respectively set back from opposite sides of the first portion of the first metal layer.

Abstract: An interconnect structure comprises a first dielectric layer, a first metal layer, a second dielectric layer, a metal via, and a second metal layer. The first dielectric layer is over a substrate. The first metal layer is over the first dielectric layer. The first metal layer comprises a first portion and a second portion spaced apart from the first portion. The second dielectric layer is over the first metal layer. The metal via has an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first metal layer, and a lower portion in the first dielectric layer. The second metal layer is over the metal via. From a top view the second metal layer comprises a metal line having longitudinal sides respectively set back from opposite sides of the first portion of the first metal layer.

Abstract: A method includes depositing a first dielectric layer over a substrate; forming a first dummy metal layer over the first dielectric layer, wherein the first dummy metal layer has first and second portions laterally separated from each other; depositing a second dielectric layer over the first dummy metal layer; etching an opening having an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first dummy metal layer, and a lower portion in the first dielectric layer, wherein a width of the lower portion of the opening is greater than a width of the middle portion of the opening, and a bottom of the opening is higher than a bottom of the first dielectric layer; and forming a dummy via in the opening and a second dummy metal layer over the dummy via and the second dielectric layer.

Abstract: A method includes depositing a first dielectric layer over a substrate; forming a first dummy metal layer over the first dielectric layer, wherein the first dummy metal layer has first and second portions laterally separated from each other; depositing a second dielectric layer over the first dummy metal layer; etching an opening having an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first dummy metal layer, and a lower portion in the first dielectric layer, wherein a width of the lower portion of the opening is greater than a width of the middle portion of the opening, and a bottom of the opening is higher than a bottom of the first dielectric layer; and forming a dummy via in the opening and a second dummy metal layer over the dummy via and the second dielectric layer.

Abstract: A semiconductor device and a method of manufacture thereof are provided. The method for manufacturing the semiconductor device includes forming a first dielectric layer on a substrate. Next, forming a first dummy metal layer on the first dielectric layer. Then, forming a second dielectric layer over the first dummy metal layer. Furthermore, forming an opening in the second dielectric layer and the first dummy metal layer. Then, forming a dummy via in the opening, wherein the dummy via extending through the second dielectric layer and at least partially through the first dummy metal layer. Finally, forming a second dummy metal layer on the second dielectric layer and contact the dummy via.

Abstract: A semiconductor device and a method of manufacture thereof are provided. The method for manufacturing the semiconductor device includes forming a first dielectric layer on a substrate. Next, forming a first dummy metal layer on the first dielectric layer. Then, forming a second dielectric layer over the first dummy metal layer. Furthermore, forming an opening in the second dielectric layer and the first dummy metal layer. Then, forming a dummy via in the opening, wherein the dummy via extending through the second dielectric layer and at least partially through the first dummy metal layer. Finally, forming a second dummy metal layer on the second dielectric layer and contact the dummy via.