Abstract: An integrated circuit includes an etch stop layer over a substrate; a UV blocker layer on the etch stop layer, wherein the UV blocker layer has a high extinction coefficient; and a low-k dielectric layer on the UV blocker layer.

Abstract: Organometallic reversible addition-fragmentation chain transfer reagents (RAFT reagents), processes of free radical polymerization employing the same and polymers with low polydispersity index obtained thereby. The process includes polymerizing at least one monomer with at least one initiator and at least one organometallic RAFT reagent to obtain polymers having terminal organometallic functional groups with low polydispersity index. In addition, the terminal organometallic functional group may be removed by subjecting the obtained polymer to elimination to provide the corresponding organic polymers.

Abstract: Organometallic reversible addition-fragmentation chain transfer reagents (RAFT reagents), processes of free radical polymerization employing the same and polymers with low polydispersity index obtained thereby. The process includes polymerizing at least one monomer with at least one initiator and at least one organometallic RAFT reagent to obtain polymers having terminal organometallic functional groups with low polydispersity index. In addition, the terminal organometallic functional group may be removed by subjecting the obtained polymer to elimination to provide the corresponding organic polymers.

Abstract: This invention relates to an organometallic polymeric photonic bandgap (OMPBG) material that can be defined by blending block copolymer (BCP) and at least two homopolymers, thereby obtaining an organometallic polymeric photonic bandgap hybrid material with periodic structure by self-assembly, wherein said homopolymers include at least one organometallic homopolymer. The improved material has high reflectivity.