Abstract: A high-temperature gas pressure measuring method includes a pressure measuring gas housing dividing step for dividing a pressure measuring gas housing into a pressure measuring room and a pressure referring room by a metal diaphragm; a gas introducing step for introducing high temperature gas into the pressure measuring room and introducing a reference pressure gas into the pressure referring room; a displacement measuring step for measuring a displacement of the metal diaphragm, wherein the displacement is caused by pressure difference between the two rooms in pressure measuring gas housing; and a pressure determining step for measuring the pressure of a high-temperature and/or corrosive to-measure pressure gas. The method dispenses with any corrosion-resistant and heat-resistant pressure sensing component and thus cuts costs.

Abstract: An apparatus for performing a selenization and sulfurization process on a glass substrate is introduced. A low-cost, non-toxic selenization and sulfurization process is performed on a large-area glass substrate in a normal-pressure environment with the apparatus to turn element selenium or sulfur into small molecules of high activity at high temperature by pyrolysis or by plasma, especially linear atmospheric pressure plasma. The process is finalized by dispersing the selenium or sulfur molecules uniformly and allowing the glass substrate to undergo reciprocating motion precisely, thereby achieving large-area, uniform selenization and sulfurization of the one-piece glass substrate.

Abstract: A selenization/sulfurization process apparatus for use with a single-piece glass substrate is characterized by two chambers for heating up a glass substrate quickly and performing selenization/sulfurization on the glass substrate to not only prevent the glass substrate from staying at a soaking temperature of a softening point for a long period of time but also increase the thin-film selenization/sulfurization temperature according to the needs of the process to thereby reduce the duration of soaking selenization/sulfurization, save energy, and save time. The glass substrate undergoes reciprocating motion in the chambers to not only attain uniform temperature throughout the glass substrate but also distribute a selenization/sulfurization gas across the glass substrate uniformly during the selenization/sulfurization operation. The recycled liquid selenium/sulfur and inert gas are reusable to thereby reduce material costs.

Abstract: A high-temperature gas pressure measuring method includes a pressure measuring gas housing dividing step for dividing a pressure measuring gas housing into a pressure measuring room and a pressure referring room by a metal diaphragm; a gas introducing step for introducing high temperature gas into the pressure measuring room and introducing a reference pressure gas into the pressure referring room; a displacement measuring step for measuring a displacement of the metal diaphragm, wherein the displacement is caused by pressure difference between the two rooms in pressure measuring gas housing; and a pressure determining step for measuring the pressure of a high-temperature and/or corrosive to-measure pressure gas. The method dispenses with any corrosion-resistant and heat-resistant pressure sensing component and thus cuts costs.

Abstract: A method of polishing metal and barrier layer interconnect integrated with an extremely low dielectric constant material includes steps of (A) preparing a wafer composed of a copper layer and the extremely low dielectric constant material, (B) treating the copper layer chemically to produce a hard and brittle surface residual formed on the surface of the copper layer, (C) keeping polishing the surface residual by ultrasonic waves, (D) polishing a barrier layer of wafer by the ultrasonic waves, thereby polishing the wafer successfully.

Abstract: A compensating chemical mechanical wafer polishing apparatus and its related polishing method, which makes end point detection easy, minimizes slurry consumption, and requires less installation space and, in which a main polishing head of diameter smaller than the wafer and a compensating polishing head are used to polish the wafer, which is upwardly disposed in contact with the polishing heads. By means of the operation of the compensating polishing head to polish the wafer over the area where the main polishing head cannot effectively evenly polish, satisfactory polishing effect is achieved.

Abstract: A compensating chemical mechanical wafer polishing apparatus and its related polishing method, which makes end point detection easy, minimizes slurry consumption, and requires less installation space and, in which a main polishing head of diameter smaller than the wafer and a compensating polishing head are used to polish the wafer, which is upwardly disposed in contact with the polishing heads. By means of the operation of the compensating polishing head to polish the wafer over the area where the main polishing head cannot effectively evenly polish, satisfactory polishing effect is achieved.