Abstract: Systems and methods for floating gate structures with high electrostatic discharge performance. In one embodiment, a semiconductor structure includes a floating gate device. The floating gate device includes an embedded diode characterized as having less temperature dependence than a Zener diode. The breakdown voltage of the embedded diode is greater than an operating voltage of an associated integrated circuit and a snapback trigger voltage of the embedded diode is lower than a breakdown voltage of the semiconductor structure.

Abstract: An electrostatic discharge (ESD) protection circuit for an integrated circuit (IC) that provides ESD protection during an ESD event is disclosed. The electrostatic discharge (ESD) protection circuit includes a first electrostatic discharge (ESD) protection component and a second electrostatic discharge (ESD) protection component coupled in series to the first electrostatic discharge (ESD) protection component. A snapback holding voltage of the electrostatic discharge protection circuit is greater than the operating voltage of the electrostatic discharge protection circuit and a snapback trigger voltage of the electrostatic discharge protection circuit is lower than an oxide breakdown voltage of said integrated circuit.

Abstract: An electrostatic discharge (ESD) protection circuit for an integrated circuit (IC) that provides ESD protection during an ESD event is disclosed. The electrostatic discharge (ESD) protection circuit includes a first electrostatic discharge (ESD) protection component and a second electrostatic discharge (ESD) protection component coupled in series to the first electrostatic discharge (ESD) protection component. A snapback holding voltage of the electrostatic discharge protection circuit is greater than the operating voltage of the electrostatic discharge protection circuit and a snapback trigger voltage of the electrostatic discharge protection circuit is lower than an oxide breakdown voltage of said integrated circuit.

Abstract: Systems and methods for floating gate structures with high electrostatic discharge performance. In one embodiment, a semiconductor structure includes a floating field gate device. The floating field gate device includes an embedded diode characterized as having less temperature dependence than a Zener diode. The breakdown voltage of the embedded diode is greater than an operating voltage of an associated integrated circuit and a snapback trigger voltage of the embedded diode is lower than a breakdown voltage of the semiconductor structure.

Abstract: A pipe connecting structure is disclosed to include two pipe members each having a coupling flange extended around the periphery at one end, and a connecting member for joining the pipe members, the connecting member having an inside annular flange extending around the inside wall of the split body thereof, engagement blocks protruding from the inside wall and symmetrically spaced from the inside annular flange at two opposite sides, and a connecting portion that joins the two symmetrical halves of split body of the connecting member.