Abstract: In one example aspect, a method for integrated circuit (IC) fabrication comprises providing a device structure including a substrate, a source/drain (S/D) feature on the substrate, a gate stack on the substrate, a contact hole over the S/D feature; and a dummy feature over the S/D feature and between the gate stack and the contact hole. The method further comprises forming in the contact hole a contact plug that is electrically coupled to the S/D feature, and, after forming the contact plug, selectively removing the dummy feature to form an air gap that extends higher than a top surface of the gate stack. The method further comprises forming over the contact plug a seal layer that covers the air gap.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: A keyboard structure with antenna function includes a keyboard unit and an antenna unit. The keyboard unit includes a keyboard signal circuit board, at least one keyboard frame disposed on the keyboard signal circuit board, and a plurality of pressing elements passing through the keyboard frame and movably disposed on the keyboard signal circuit board. The antenna unit includes at least one metal circuit disposed on the keyboard frame. Thus, the length of a signal transmission line between the metal circuit and a wireless antenna module can be substantially reduced. Therefore, not only the insertion loss of the instant disclosure can be reduced to obtain better quality of wireless communication, but also the manufacturing cost and time of the instant disclosure also can be reduced effectively.

Abstract: A keyboard structure with antenna function includes a keyboard unit and an antenna unit. The keyboard unit includes a keyboard signal circuit board, at least one keyboard frame disposed on the keyboard signal circuit board, and a plurality of pressing elements passing through the keyboard frame and movably disposed on the keyboard signal circuit board. The antenna unit includes at least one metal circuit disposed on the keyboard frame. Thus, the length of a signal transmission line between the metal circuit and a wireless antenna module can be substantially reduced. Therefore, not only the insertion loss of the instant disclosure can be reduced to obtain better quality of wireless communication, but also the manufacturing cost and time of the instant disclosure also can be reduced effectively.