Patents by Inventor Yih S. Lin

Yih S. Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma enhanced chemical vapor deposited vertical silicon nitride resistor
    Patent number: 4786612
    Abstract: An improved resistor for use in MOS integrated circuits. An opening is formed in an insulative layer which separates two conductive regions. A plasma enhanced chemical vapor deposition of passivation material such as silicon-rich silicon nitride is deposited in the window, contacting both conductive regions and providing resistance in a vertical direction between these regions.
    Type: Grant
    Filed: December 29, 1987
    Date of Patent: November 22, 1988
    Assignee: Intel Corporation
    Inventors: Leopoldo D. Yau, Shih-Ou Chen, Yih S. Lin
  • Method of making a silicon nitride resistor using plasma enhanced chemical vapor deposition
    Patent number: 4755480
    Abstract: An improved resistor for use in MOS integrated circuits. An opening is formed in an insulative layer which separates two conductive regions. A plasma enhanced chemical vapor deposition of passivation material such as silicon-rich silcon nitride is deposited in the window, contacting both conductive regions and providing resistance in a vertical direction between these regions.A subsequent annealing process involving controlled temperatures and cycle times provides for determining desired resistive values from an equivalent deposition process. Further, a barrier metal layer may be formed between the vertical resistor and the second conductive region.
    Type: Grant
    Filed: November 12, 1986
    Date of Patent: July 5, 1988
    Assignee: Intel Corporation
    Inventors: Leopoldo D. Yau, Shih-ou Chen, Yih S. Lin