Patents by Inventor Yih-Shan Yang

Yih-Shan Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12101068
    Abstract: A voltage driver circuit for an output stage of an operational amplifier, or other circuits, includes a level shifter and an output driver including a source follower and a common source amplifier in a push-pull configuration. The level shifter generates a node voltage as a function of an input voltage on the input node. The output driver including a first transistor having a control terminal receiving the node voltage, and connected between a supply voltage and an output node, and a second transistor having a control terminal receiving the input voltage from the input node, and connected between the output node and a reference voltage, wherein the first and second transistors have a common conductivity type.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: September 24, 2024
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Yih-Shan Yang
  • Patent number: 11984169
    Abstract: An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a first circuit to generate a temperature-dependent voltage (TDV) that is dependent on an operating temperature of the integrated circuit, and a second circuit to generate a plurality of temperature reference voltages, based on or more codes. One or more comparator circuits compare individual ones of the plurality of reference voltages with the TDV, to generate one or more comparison signals that are indicative of the operating temperature of the integrated circuit.
    Type: Grant
    Filed: May 2, 2023
    Date of Patent: May 14, 2024
    Assignee: Macronix International Co., Ltd.
    Inventor: Yih-Shan Yang
  • Publication number: 20230268011
    Abstract: An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a first circuit to generate a temperature-dependent voltage (TDV) that is dependent on an operating temperature of the integrated circuit, and a second circuit to generate a plurality of temperature reference voltages, based on or more codes. One or more comparator circuits compare individual ones of the plurality of reference voltages with the TDV, to generate one or more comparison signals that are indicative of the operating temperature of the integrated circuit.
    Type: Application
    Filed: May 2, 2023
    Publication date: August 24, 2023
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Yih-Shan YANG
  • Patent number: 11676669
    Abstract: An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a first circuit to generate a temperature-dependent voltage (TDV) that is dependent on an operating temperature of the integrated circuit, and a second circuit to generate a plurality of temperature reference voltages, based on or more codes. One or more comparator circuits compare individual ones of the plurality of reference voltages with the TDV, to generate one or more comparison signals that are indicative of the operating temperature of the integrated circuit.
    Type: Grant
    Filed: March 18, 2021
    Date of Patent: June 13, 2023
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Yih-Shan Yang
  • Publication number: 20220299378
    Abstract: An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a first circuit to generate a temperature-dependent voltage (TDV) that is dependent on an operating temperature of the integrated circuit, and a second circuit to generate a plurality of temperature reference voltages, based on or more codes. One or more comparator circuits compare individual ones of the plurality of reference voltages with the TDV, to generate one or more comparison signals that are indicative of the operating temperature of the integrated circuit.
    Type: Application
    Filed: March 18, 2021
    Publication date: September 22, 2022
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Yih-Shan YANG
  • Publication number: 20210313942
    Abstract: A voltage driver circuit for an output stage of an operational amplifier, or other circuits, includes a level shifter and an output driver including a source follower and a common source amplifier in a push-pull configuration. The level shifter generates a node voltage as a function of an input voltage on the input node. The output driver including a first transistor having a control terminal receiving the node voltage, and connected between a supply voltage and an output node, and a second transistor having a control terminal receiving the input voltage from the input node, and connected between the output node and a reference voltage, wherein the first and second transistors have a common conductivity type.
    Type: Application
    Filed: June 16, 2021
    Publication date: October 7, 2021
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Yih-Shan YANG
  • Patent number: 11070181
    Abstract: A voltage driver circuit for an output stage of an operational amplifier, or other circuits, includes a level shifter and an output driver including a source follower and a common source amplifier in a push-pull configuration. The level shifter generates a node voltage as a function of an input voltage on the input node. The output driver including a first transistor having a control terminal receiving the node voltage, and connected between a supply voltage and an output node, and a second transistor having a control terminal receiving the input voltage from the input node, and connected between the output node and a reference voltage, wherein the first and second transistors have a common conductivity type.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: July 20, 2021
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Yih-Shan Yang
  • Patent number: 11056172
    Abstract: A flash memory and an operation method thereof are provided. The flash memory includes a plurality of memory cell strings and a pass voltage generator. Each of the memory cell strings includes a plurality of memory cells. The pass voltage generator is configured to provide a pass voltage to a plurality of word lines of a plurality of unselected memory cells of a selected memory string. During a reading operation, the pass voltage generator raises the pass voltage from a first voltage at a first time point, and raises the pass voltage to a second voltage at a second time point. The second voltage is lower than a target voltage times a preset ratio The first time point is earlier than a start time point of a bit line voltage received by the selected memory cell, and the second time point occurs at the start time point of the bit line voltage.
    Type: Grant
    Filed: April 28, 2020
    Date of Patent: July 6, 2021
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Che-Ping Chen, Ya-Jui Lee, Shin-Jang Shen, Yih-Shan Yang
  • Patent number: 11016518
    Abstract: A voltage subtracter includes a first charge storage device and a second charge storage device. The first charge storage device receives a first voltage and a second voltage during a first time period, and storages a first difference voltage between the first voltage and the second voltage. The second charge storage device receives a reference ground voltage and the first voltage during a second time period, and storages a second difference voltage between the reference ground voltage and the first voltage. The first charge storage device and the second charge storage device are coupled to an output end during a second time period, and a charge sharing operation is operatedon the first charge storage device and the second charge storage device to generate an output voltage on the output end.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: May 25, 2021
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Yih-Shan Yang
  • Patent number: 10768646
    Abstract: A low dropout (LDO) regulating device includes a regulator and a pre-charger. The regulator is configured to adjust an output voltage provided to an output node in accordance with a voltage difference between a first reference voltage and a feedback voltage on a feedback node, wherein the feedback node is coupled to the output node. The pre-charger is electrically connected to the regulator, and is electrically connected to the feedback node for charge sharing.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: September 8, 2020
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Yih-Shan Yang
  • Publication number: 20200162043
    Abstract: A voltage driver circuit for an output stage of an operational amplifier, or other circuits, includes a level shifter and an output driver including a source follower and a common source amplifier in a push-pull configuration. The level shifter generates a node voltage as a function of an input voltage on the input node. The output driver including a first transistor having a control terminal receiving the node voltage, and connected between a supply voltage and an output node, and a second transistor having a control terminal receiving the input voltage from the input node, and connected between the output node and a reference voltage, wherein the first and second transistors have a common conductivity type.
    Type: Application
    Filed: June 5, 2019
    Publication date: May 21, 2020
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Yih-Shan YANG
  • Patent number: 10515707
    Abstract: A memory device comprises a first NAND string that includes a first plurality of memory cells and a first string select switch arranged in series, the first string select switch disposed between a first bit line and a first end of the first plurality, a second NAND string that includes a second plurality of memory cells and a second string select switch arranged in series, the second string select switch disposed between a second bit line and a first end of the second plurality, word lines coupled to memory cells in the first plurality and memory cells in the second plurality, and a string select line coupled to the first and second string select switches. A method of operating such a memory device comprises applying a voltage varying in a manner complementary to absolute temperature to at least one of the word lines and the string select line.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: December 24, 2019
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Yih-Shan Yang, Shin-Jang Shen
  • Publication number: 20190354130
    Abstract: A voltage subtracter and an operation method for subtracting voltages are provided. The voltage subtracter includes a first charge storage device and a second charge storage device. The first charge storage device receives a first voltage and a second voltage during a first time period, and storages a first difference voltage between the first voltage and the second voltage. The second charge storage device receives a reference ground voltage and the first voltage during a second time period, and storages a second difference voltage between the reference ground voltage and the first voltage. The first charge storage device and the second charge storage device are coupled to an output end during a second time period, and a charge sharing operation is operated on the first charge storage device and the second charge storage device to generate an output voltage on the output end.
    Type: Application
    Filed: December 12, 2018
    Publication date: November 21, 2019
    Applicant: MACRONIX International Co., Ltd.
    Inventor: Yih-Shan Yang
  • Patent number: 10481965
    Abstract: Counting status circuits are electrically coupled to corresponding status elements. The status elements selectably store a bit status of a bit line coupled to a memory array. The bit status can indicate one of at least pass and fail. The counting status circuits are electrically coupled to each other in a sequential order. Control logic causes processing of the counting status circuits in the sequential order to determine a total of the memory elements that store the bit status. The total number of memory elements that store the bit status indicate the number of error bits or non-error bits, which can help determine whether there are too many errors to be fixed by error correction codes.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: November 19, 2019
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Yih-Shan Yang, Shou-Nan Hung, Chun-Hsiung Hung, Yao-Jen Kuo, Meng-Fan Chang
  • Publication number: 20190295667
    Abstract: A memory device comprises a first NAND string that includes a first plurality of memory cells and a first string select switch arranged in series, the first string select switch disposed between a first bit line and a first end of the first plurality, a second NAND string that includes a second plurality of memory cells and a second string select switch arranged in series, the second string select switch disposed between a second bit line and a first end of the second plurality, word lines coupled to memory cells in the first plurality and memory cells in the second plurality, and a string select line coupled to the first and second string select switches. A method of operating such a memory device comprises applying a voltage varying in a manner complementary to absolute temperature to at least one of the word lines and the string select line.
    Type: Application
    Filed: March 26, 2018
    Publication date: September 26, 2019
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: YIH-SHAN YANG, SHIN-JANG SHEN
  • Patent number: 10133287
    Abstract: A semiconductor device includes an amplifier, a pass transistor, a compensation circuit, and a bias voltage generator. The amplifier has an output terminal. The pass transistor has a gate and an output terminal. The gate is coupled to the output terminal of the amplifier, and the output terminal of the pass transistor is coupled to a load. The compensation circuit is coupled between the output terminal of the amplifier and the output terminal of the pass transistor. The compensation circuit has a variable impedance. The bias voltage generator is coupled between the output terminal of the pass transistor and the compensation circuit.
    Type: Grant
    Filed: December 7, 2015
    Date of Patent: November 20, 2018
    Assignee: Macronix International Co., Ltd.
    Inventor: Yih-Shan Yang
  • Patent number: 10128865
    Abstract: An N bit digital-to-analog converter DAC is based on a first stage including a first set of resistors corresponding to higher order bits of the digital input, and a second stage including a second set of resistors corresponding to lower order bits of the digital input. A plurality of pass transistors is arrange to connect a first subset of the first set of resistors in the first stage selected in response to a digital input to a second subset of the second set of resistors in the second stage selected in response to the digital input. A means for reducing variations in a sum of on-resistances RON of the pass transistors in the plurality of pass transistors selected in response to a digital input is provided, resulting in more uniform steps in output voltage of the DAC over a wider range.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: November 13, 2018
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Yih-Shan Yang
  • Publication number: 20180259987
    Abstract: A low dropout (LDO) regulating device includes a regulator and a pre-charger. The regulator is configured to adjust an output voltage provided to an output node in accordance with a voltage difference between a first reference voltage and a feedback voltage on a feedback node, wherein the feedback node is coupled to the output node. The pre-charger is electrically connected to the regulator, and is electrically connected to the feedback node for charge sharing.
    Type: Application
    Filed: March 9, 2017
    Publication date: September 13, 2018
    Inventor: Yih-Shan Yang
  • Publication number: 20170160757
    Abstract: A semiconductor device includes an amplifier, a pass transistor, a compensation circuit, and a bias voltage generator. The amplifier has an output terminal. The pass transistor has a gate and an output terminal. The gate is coupled to the output terminal of the amplifier, and the output terminal of the pass transistor is coupled to a load. The compensation circuit is coupled between the output terminal of the amplifier and the output terminal of the pass transistor. The compensation circuit has a variable impedance. The bias voltage generator is coupled between the output terminal of the pass transistor and the compensation circuit.
    Type: Application
    Filed: December 7, 2015
    Publication date: June 8, 2017
    Inventor: Yih-Shan YANG
  • Publication number: 20170102977
    Abstract: Counting status circuits are electrically coupled to corresponding status elements. The status elements selectably store a bit status of a bit line coupled to a memory array. The bit status can indicate one of at least pass and fail. The counting status circuits are electrically coupled to each other in a sequential order. Control logic causes processing of the counting status circuits in the sequential order to determine a total of the memory elements that store the bit status. The total number of memory elements that store the bit status indicate the number of error bits or non-error bits, which can help determine whether there are too many errors to be fixed by error correction codes.
    Type: Application
    Filed: December 22, 2016
    Publication date: April 13, 2017
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: YIH-SHAN YANG, SHOU-NAN HUNG, CHUN-HSIUNG HUNG, YAO-JEN KUO, MENG-FAN CHANG