Abstract: Method for reducing dopant contamination during the fabrication of semiconductor devices is provided. The method includes doping a first layer, such as a polysilicon layer. During a subsequent annealing process, a gas, such as nitrogen, oxygen, a combination thereof, or the like, is introduced. The gas causes a cap layer to be formed over the first layer, preventing or reducing out-diffusing of the dopants and contamination of the process chamber. In a preferred embodiment, the gas is introduced during the ramp-up stage of the annealing process. The cap layer may be removed prior to etching the first layer.