Abstract: The experimental realization of a non-volatile artificial synapse using organic polymers in a scalable fabrication process is provided. The three-terminal electrochemical neuromorphic device successfully emulates the key features of biological synapses: long-term potentiation/depression, spike-timing-dependent plasticity learning rule, paired-pulse facilitation, and ultralow energy consumption. The artificial synapse network exhibits excellent endurance against bending tests and enables a direct emulation of logic gates, which shows the feasibility of using them in futuristic hierarchical neural networks. Based on the demonstration of 100 distinct, non-volatile conductance states, high accuracy in pattern recognition and face classification neural network simulations is achieved.

Abstract: Systems and methods for using an indium oxide field-effect transistor. A method includes applying phosphonic acid to a nanoribbon of the indium oxide field-effect transistor. The method also includes preparing the nanoribbon with capture antibodies corresponding to a biomarker. The method also includes applying a fluid sample containing at least one biomarker to the nanoribbon. The method also includes preparing the nanoribbon with secondary antibodies corresponding to the biomarker. The method also includes applying a protein solution to the nanoribbon. The method also includes detecting the presence of the at least one biomarker when a reactive solution is applied to the nanoribbon.

Abstract: A method for forming an anode of a sodium ion battery includes a step of heat treating the red phosphorus precursor and reduced graphene oxide powder at a first temperature that vaporizes the red phosphorus precursor such that red phosphorus structures grow on the reduced graphene oxide powder. Another method for forming an anode of a sodium ion battery includes steps of placing a red phosphorus precursor and a graphene oxide precursor in a reaction chamber; establishing a reducing environment in the reaction chamber; and heating the red phosphorus precursor and a graphene oxide precursor to a first temperature that is sufficient temperature to form a composite of red phosphorus and reduced graphene oxide. Characteristically, red phosphorus deposition and graphene oxide reduction are completed simultaneously in a single-step heat treatment. A method for making a black phosphorus-composite for sodium-ion batter anodes is also provided.

Abstract: Systems and methods for fabricating indium oxide field-effect transistors. A method may include placing a first layer shadow mask having a first plurality of apertures onto a substrate. The method may further include depositing indium oxide through the first plurality of apertures and onto the substrate to form a plurality of indium oxide nanoribbons. The method may further include removing the first layer shadow mask. The method may further include placing a second layer shadow mask having a second plurality of apertures onto the substrate. The method may further include depositing a conductive material through the second plurality of apertures and onto the substrate to form a plurality of source and drain electrodes in electrical contact with the plurality of indium oxide nanoribbons. The method may further include removing the second layer shadow mask.