Abstract: Provided are a semiconductor structure and a method for manufacturing same. The semiconductor structure includes a target structure, a low dielectric constant material layer disposed on the target structure, and a protective layer disposed on the low dielectric constant material layer. The low dielectric constant material layer and the protective layer are prepared from the same precursor, and the protective layer has a lower carbon content.

Abstract: The method for manufacturing the semiconductor structure includes: providing a substrate, and forming contact holes in the substrate; depositing a metal at a bottom of each contact hole, and performing a reverse sputtering treatment to form a metal layer; in the reverse sputtering treatment, metal atoms or metal ions are sputtered onto at least a part of a side wall of each contact hole; performing a annealing treatment, to cause the substrate reacts with the metal layer to form a metal silicide layer.