Patents by Inventor Yi Heng Lin

Yi Heng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942556
    Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Ru Lin, Shu-Han Chen, Yi-Shao Li, Chun-Heng Chen, Chi On Chui
  • Patent number: 11931388
    Abstract: Disclosed herein is a process for producing a postbiotic extract, which includes providing a first material having a first isoelectric point ranging from pH 1 to pH 6 and a second material having a second isoelectric point ranging from pH 4 to pH 8, admixing the first material and a probiotic microorganism with water having a pH greater than the second isoelectric point, so as to form a mixture, adding the second material into the mixture and then adjusting a pH of the second material-added mixture to between the first and second isoelectric points so that a precipitate is formed, and subjecting the precipitate to a cell wall isolation treatment to obtain the postbiotic extract. Use of the postbiotic extract is also disclosed.
    Type: Grant
    Filed: November 2, 2022
    Date of Patent: March 19, 2024
    Assignee: CHAMBIO CO., LTD.
    Inventors: Meei-Yn Lin, Hung-Pin Chiu, Yi-Heng Chiu
  • Patent number: 11925668
    Abstract: Disclosed herein is a process for producing a postbiotic extract, which includes providing a first material having a first isoelectric point ranging from pH 1 to pH 6 and a second material having a second isoelectric point ranging from pH 4 to pH 8, admixing the first material and a probiotic microorganism with water having a pH greater than the second isoelectric point, so as to form a mixture, adding the second material into the mixture and then adjusting a pH of the second material-added mixture to between the first and second isoelectric points so that a precipitate is formed, and subjecting the precipitate to a cell wall isolation treatment to obtain the postbiotic extract. Use of the postbiotic extract is also disclosed.
    Type: Grant
    Filed: November 2, 2022
    Date of Patent: March 12, 2024
    Assignee: CHAMBIO CO., LTD.
    Inventors: Meei-Yn Lin, Hung-Pin Chiu, Yi-Heng Chiu
  • Patent number: 7697259
    Abstract: A novel vehicle which is suitable for transporting and/or temporarily storing objects such as masks or reticles and is effective in eliminating or preventing electrostatic discharges on the masks, reticles or other objects. The vehicle includes a frame for receiving the objects and at least one ESD eliminator provided on the frame for neutralizing electrostatic charges on the objects. Neutralization of the electrostatic charges prevents electrostatic discharges from damaging microelectronic circuits, for example, on the masks, reticles or other objects.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: April 13, 2010
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chian-Chen Chiou, Chi-Chien Chang, Shun Chih Hsieh, Yi Heng Lin, Hsiao-Lung Sun, Nien-Hua Chang