Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A device includes first and second semiconductor fins, first, second, third and fourth fin sidewall spacers, and first and second epitaxy structures. The first and second fin sidewall spacers are respectively on opposite sides of the first semiconductor fin. The third and fourth fin sidewall spacers are respectively on opposite sides of the second semiconductor fin. The first and third fin sidewall spacers are between the first and second semiconductor fins and have smaller heights than the second and fourth fin sidewall spacers. The first and second epitaxy structures are respectively on the first and second semiconductor fins and merged together.

Abstract: A UE performs up to a threshold number of attempts to transmit a default capability message to a base station, the default capability message representing a default set of CA combinations supported by the UE. If transmission is unsuccessful, the UE switches to a compact capability mode in which the UE attempts to transmit compacted UE capability messages representing successively smaller subsets of the default set of CA combinations until either a capability message is successfully received by the base station or a second threshold number of unsuccessful transmission attempts is performed. To facilitate configuration of an initial compacted capability message, the UE maintains a PC list that lists one or more cells that have been identified previously as incapable of receiving default-sized capability messages and that further identifies a representation of a limited subset of CA combinations to include in capability messages sent to a corresponding listed cell.

Abstract: A data storage device includes a memory device and a memory controller. The memory controller is arranged to configure a plurality of first memory blocks to receive data from a host device. The first memory blocks form at least a first superblock. When an amount of data stored in the first memory blocks reaches a specific value, the memory controller moves the data from the first memory blocks to a plurality of second memory blocks in a predetermined procedure. The second memory blocks form at least a second superblock. The second superblock includes the second memory blocks located in different memory chips. The data stored in two adjacent logical pages in the first superblock is written in two second memory blocks located in different memory chips.

Abstract: A data storage device includes a memory device and a memory controller. The memory controller is arranged to configure a plurality of first memory blocks to receive data from a host device. The first memory blocks form at least a first superblock. When an amount of data stored in the first memory blocks reaches a specific value, the memory controller moves the data from the first memory blocks to a plurality of second memory blocks in a predetermined procedure. The second memory blocks form at least a second superblock. The second superblock includes the second memory blocks located in different memory chips. The data stored in two adjacent logical pages in the first superblock is written in two second memory blocks located in different memory chips.

Abstract: A light-emitting diode (LED) protection structure includes an LED portion and a protection portion. The protection portion includes a fuse and a Zener diode connected in series. The protection portion is electrically connected to the LED portion in parallel but opposite in direction. As such, the LED protection structure can effectively protect the LEDs and the Zener diode from being damaged to thereby reduce costs.

Abstract: A light-emitting diode (LED) protection structure includes an LED portion and a protection portion. The protection portion includes a fuse and a Zener diode connected in series. The protection portion is electrically connected to the LED portion in parallel but opposite in direction. As such, the LED protection structure can effectively protect the LEDs and the Zener diode from being damaged to thereby reduce costs.