Abstract: A semiconductor structure a method of fabricating thereof including a substrate having a device region and a dummy region. A first active region is disposed over the substrate in the device region and a second active region is over the substrate in the dummy region. A first operational gate structure over the first active region and a first non-operational gate structure over the second active region. A first epitaxial region of an n-type dopant is adjacent the first operation gate structure; and a second epitaxial region of an n-type dopant is adjacent the first non-operational gate structure.

Abstract: A manufacturing method of tape includes the steps of providing a tape including substrate units, providing a die device and a cutting and/or pressing process. Each of the substrate units includes a carrier, a circuit layer, an adhesive and a heat spreader, the heat spreader is attached onto the carrier by the adhesive. In the cutting and/or pressing process, the die device is provided to press the tape to generate separation protrusions on the heat spreader and allow the separation protrusions to protrude from a heat dissipation surface of the heat spreader. When rolling the tape, the separation protrusions can separate the stacked substrate units to prevent the adhesive from being squeezed out to contaminate the tape.

Abstract: An optical detection device includes a base, a cartridge placing portion, a shield cover, a processor, and an optical sensor. The base includes an opening. The cartridge placing portion is located in the base, and is in communication with the opening. The shield cover is configured to open or close the opening. When the optical sensor is actuated, the shield cover closes the opening to prevent external ambient light from entering the opening to affect the optical sensor during sensing.

Abstract: A non-volatile memory structure including a substrate, a plurality of charge storage layers, a first dielectric layer, and a control gate is provided. The charge storage layers are located on the substrate. An opening is provided between two adjacent charge storage layers. The first dielectric layer is located on the charge storage layers and on a surface of the opening. A bottom cross-sectional profile of the first dielectric layer located in the opening is a profile that is recessed on both sides. The control gate is located on the first dielectric layer and fills the opening.

Abstract: A non-volatile memory structure including a substrate, a plurality of charge storage layers, a first dielectric layer, and a control gate is provided. The charge storage layers are located on the substrate. An opening is provided between two adjacent charge storage layers. The first dielectric layer is located on the charge storage layers and on a surface of the opening. A bottom cross-sectional profile of the first dielectric layer located in the opening is a profile that is recessed on both sides. The control gate is located on the first dielectric layer and fills the opening.

Abstract: A method is provided for fabricating a diol containing a bis-cycloaliphate. The diol is hydrogenated with hydrogen and a catalyst. Therein, the diol has a bis-aromatic. The catalyst comprises an active metal and a catalyst carrier. The active metal is a VIII-B-group transition element. The catalyst carrier is an oxide of IV-B-group element. Thus, the diol containing the bis-cycloaliphate is generated.

Abstract: The present invention discloses a process for making alicyclic polycarboxylic acids or their derivatives, referring to a process for hydrogenating aromatic polycarboxylic acids or their derivatives in the presence of hydrogen and a catalyst to form alicyclic polycarboxylic acids or their derivatives, and the catalyst comprises at least one active metal of group VIIIB transition elements of the periodic table of elements, and a catalyst support comprising group IIA and group IIIA elements in a specific weight ratio.

Abstract: The present invention discloses a process for making alicyclic polycarboxylic acids or their derivatives, referring to a process for hydrogenating aromatic polycarboxylic acids or their derivatives in the presence of hydrogen and a catalyst to form alicyclic polycarboxylic acids or their derivatives, and the catalyst comprises at least one active metal of group VIIIB transition elements of the periodic table of elements, and a catalyst support comprising group IIA and group IIIA elements in a specific weight ratio.

Abstract: This invention discloses the process for hydrogenation of aromatic polycarboxylic acids or derivatives thereof, hydrogenation of aromatic polycarboxylic acids or derivatives thereof can be achieved in the present of the catalyst, which consist at least one metal of the eighth transition group of the Periodic Table as the active metal while group IIA and group IVA elements are included as the catalyst support.

Abstract: Semiconductor devices and manufacturing method thereof are disclosed. The semiconductor device includes a substrate, a device layer, first and second conductive layers, first and second vias, and a MIM capacitor structure. The substrate includes active and passive regions. The device layer is in the active region. The first conductive layer is over the device layer. The second conductive layer is over the first conductive layer, wherein the first conductive layer is disposed between the device layer and the second conductive layer. The first via electrically connects the first and the second conductive layers. The MIM capacitor structure is between the first and the second conductive layers and in the passive region, and includes first and second electrodes and a capacitor dielectric layer therebetween. The capacitor dielectric layer includes Group IIIA-metal oxide or nitride. The second via electrically connects the second conductive layer and one of the first and second electrodes.

Abstract: An intelligent control faucet includes a faucet that includes a manual operation valve, an intelligent control module, a water egress tube, a cold water ingress tube, a hot water ingress tube, and a magnetic reed detection device. The water egress tube, the cold water ingress tube, and the hot water ingress tube are connected to the manual operation valve. The intelligent control module is connected, in a series manner, to the water egress tube. The magnetic reed detection device is mounted to the water egress tube and is connected through a feeding cable or directly to the intelligent control module. Water flow can be established or cut off through pulling the water egress tube so that the use is made easy.

Abstract: Semiconductor devices and manufacturing method thereof are disclosed. The semiconductor device includes a substrate, a device layer, first and second conductive layers, first and second vias, and a MIM capacitor structure. The substrate includes active and passive regions. The device layer is in the active region. The first conductive layer is over the device layer. The second conductive layer is over the first conductive layer, wherein the first conductive layer is disposed between the device layer and the second conductive layer. The first via electrically connects the first and the second conductive layers. The MIM capacitor structure is between the first and the second conductive layers and in the passive region, and includes first and second electrodes and a capacitor dielectric layer therebetween. The capacitor dielectric layer includes Group IIIA-metal oxide or nitride. The second via electrically connects the second conductive layer and one of the first and second electrodes.

Abstract: An intelligent control faucet includes a faucet that includes a manual operation valve, an intelligent control module, a water egress tube, a cold water ingress tube, a hot water ingress tube, and a magnetic reed detection device. The water egress tube, the cold water ingress tube, and the hot water ingress tube are connected to the manual operation valve. The intelligent control module is connected, in a series manner, to the water egress tube. The magnetic reed detection device is mounted to the water egress tube and is connected through a feeding cable or directly to the intelligent control module. Water flow can be established or cut off through pulling the water egress tube so that the use is made easy.

Abstract: An intelligent control faucet includes a faucet that includes a manual operation valve, an intelligent control module, a water egress tube, a cold water ingress tube, a hot water ingress tube, and a magnetic reed detection device. The water egress tube, the cold water ingress tube, and the hot water ingress tube are connected to the manual operation valve. The intelligent control module is connected, in a series manner, to the water egress tube. The magnetic reed detection device is mounted to the water egress tube and is connected through a feeding cable or directly to the intelligent control module. Water flow can be established or cut off through pulling the water egress tube so that the use is made easy.

Abstract: An intelligent control faucet includes a faucet that includes a manual operation valve, an intelligent control module, a water egress tube, a cold water ingress tube, a hot water ingress tube, and a magnetic reed detection device. The water egress tube, the cold water ingress tube, and the hot water ingress tube are connected to the manual operation valve. The intelligent control module is connected, in a series manner, to the water egress tube. The magnetic reed detection device is mounted to the water egress tube and is connected through a feeding cable or directly to the intelligent control module. Water flow can be established or cut off through pulling the water egress tube so that the use is made easy.

Abstract: A method and a system for preserving privacy of a dataset are provided. In the method, a k-anonymity value with respect to a sensitive data field is determined according to at least one first quasi-identifier. Data entries in each group have the same value in the one or more fields of the first quasi-identifier and data entries in different groups have different values in the one or more fields of the first quasi-identifier. A first group and a second group among the plurality of groups are determined according to the reference number Kr, where the first group and the second group are merged into a merging group. The number of data entries in the merging group is not less than a reference number Kr. One or more fields of at least one first quasi-identifier is masked for the merging group.

Abstract: A method and a system for preserving privacy of a dataset are provided. In the method, a k-anonymity value with respect to a sensitive data field is determined according to at least one first quasi-identifier. Data entries in each group have the same value in the one or more fields of the first quasi-identifier and data entries in different groups have different values in the one or more fields of the first quasi-identifier. A first group and a second group among the plurality of groups are determined according to the reference number Kr, where the first group and the second group are merged into a merging group. The number of data entries in the merging group is not less than a reference number Kr. One or more fields of at least one first quasi-identifier is masked for the merging group.

Abstract: A trigger valve includes a valve base, a valve rod, a sliding portion and a shuttle valve. The valve base is disposed at a gun body of the nail gun between a compressed chamber and a main air valve of the nail gun. The valve rod is capable of being driven by a trigger of the nail gun to move so as to open or close high pressure air from the compressed chamber into the valve base. The sliding portion is capable of being driven by high pressure air to move to cause a safety slide rod of the nail gun producing a displacement along a hitting-nail direction. The shuttle valve is capable of being driven to move under control of the displacement of the sliding portion so as to open or close high pressure air from the valve base into the main air valve.

Abstract: In a linkage mechanism between a trigger valve and a control valve in a nail gun, the control valve is disposed on a main body of the nail gun. A valve plug of the control valve adjoins to a safety rod of the nail gun. A trigger valve is mounted on the main body and an outer trigger is disposed adjacent to the trigger valve. A valve stem of the trigger valve is extended in the outer trigger. An inner trigger is pivotably connected to a bottom end of the valve stem. An end of a rod member is slidably disposed at a side of the outer trigger and another end of the rod member is connected between the valve plug and the safety rod with an arm. A stopping portion is formed at a middle portion of the rod member. The stopping portion is configured for pressing the outer trigger so as to drive the inner trigger to push the rod member, the arm, the valve plug and the safety rod to move along a nail driving direction of the nail gun.

Abstract: A trigger valve includes a valve base, a valve rod, a sliding portion and a shuttle valve. The valve base is disposed at a gun body of the nail gun between a compressed chamber and a main air valve of the nail gun. The valve rod is capable of being driven by a trigger of the nail gun to move so as to open or close high pressure air from the compressed chamber into the valve base. The sliding portion is capable of being driven by high pressure air to move to cause a safety slide rod of the nail gun producing a displacement along a hitting-nail direction. The shuttle valve is capable of being driven to move under control of the displacement of the sliding portion so as to open or close high pressure air from the valve base into the main air valve.