Patents by Inventor Yii Fang Wang

Yii Fang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SnOISFET device, manufacturing method, and methods and apparatus for use thereof
    Patent number: 7019343
    Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
    Type: Grant
    Filed: December 18, 2003
    Date of Patent: March 28, 2006
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Yii Fang Wang
  • SnOISFET device, manufacturing method, and methods and apparatus for use thereof
    Patent number: 7009376
    Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
    Type: Grant
    Filed: March 1, 2004
    Date of Patent: March 7, 2006
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Yii Fang Wang
  • SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof
    Patent number: 6905896
    Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
    Type: Grant
    Filed: April 22, 2003
    Date of Patent: June 14, 2005
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Yii Fang Wang
  • SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof
    Patent number: 6806116
    Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
    Type: Grant
    Filed: March 30, 2004
    Date of Patent: October 19, 2004
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Yii Fang Wang
  • SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof
    Publication number: 20040180463
    Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
    Type: Application
    Filed: March 30, 2004
    Publication date: September 16, 2004
    Applicant: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Yii Fang Wang
  • SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof
    Publication number: 20040164330
    Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
    Type: Application
    Filed: March 1, 2004
    Publication date: August 26, 2004
    Applicant: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Yii Fang Wang
  • SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof
    Publication number: 20040129984
    Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
    Type: Application
    Filed: December 18, 2003
    Publication date: July 8, 2004
    Applicant: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Yii Fang Wang
  • SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof
    Publication number: 20030218194
    Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
    Type: Application
    Filed: April 22, 2003
    Publication date: November 27, 2003
    Inventors: Jung-Chuan Chou, Yii Fang Wang
  • Apparatus for measuring temperature parameters of an ISFET using hydrogenated amorphous as a sensing film
    Patent number: 6573741
    Abstract: An apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.
    Type: Grant
    Filed: April 23, 2002
    Date of Patent: June 3, 2003
    Inventors: Jung Chuan Chou, Yii Fang Wang
  • Method and apparatus for measuring temperature parameters of an ISFET using hydrogenated amorphous silicon as a sensing film
    Patent number: 6525554
    Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.
    Type: Grant
    Filed: January 24, 2001
    Date of Patent: February 25, 2003
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung Chuan Chou, Yii Fang Wang
  • Method and apparatus for measuring temperature parameters of an ISFET using hydrogenated amorphous as a sensing film
    Publication number: 20020158645
    Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.
    Type: Application
    Filed: April 23, 2002
    Publication date: October 31, 2002
    Applicant: National Yunlin University of Science and Technology
    Inventors: Jung Chuan Chou, Yii Fang Wang
  • Method and apparatus for measuring temperature parameters of an ISFET using hydrogenated amorphous silicon as a sensing film
    Publication number: 20020030503
    Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.
    Type: Application
    Filed: January 24, 2001
    Publication date: March 14, 2002
    Applicant: National Yunlin University of Science and Technology
    Inventors: Jung Chuan Chou, Yii Fang Wang