Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.

Abstract: Embodiments include semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: Embodiments include semiconductor processing methods to form low-K films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, wherein the one or more deposition precursors include a silicon-containing precursor. The silicon-containing precursor may include a carbon chain. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A semiconductor substrate may be positioned within the processing region. The methods may include forming a layer of low dielectric constant material on the semiconductor substrate. The methods may include purging the processing region of the one or more deposition precursors. A plasma power may be maintained at less than or about 750 W while purging the processing region. The methods may include forming an interface layer on the layer of low dielectric constant material. The methods may include forming a cap layer on the interface layer.

Abstract: The present invention relates to a coating film forming composition, in which a coating film formed by the coating film forming composition has a water contact angle, after a surface was washed with water, of 25° or less, and a water content, after impregnation with water at 25° C. for 2 hours, of 110% or less.

Abstract: The subject technology identifies a set of functions included in a set of files corresponding to a library. The subject technology, for each function in the set of functions, registers the function as a user defined function (UDF). The subject technology generates a name for the function based at least in part on a predetermined prefix, wherein the predetermined prefix comprises an alphanumeric string. The subject technology generates, using at least a particular set of input parameters utilized by the function and a particular type of parameter of each input parameter of the particular set of input parameters, a particular set of source code. The subject technology stores information corresponding to the function in a metadata database. The subject technology provides access to the function in a different application.

Abstract: The subject technology identifies a set of functions in a set of files corresponding to a library. The subject technology, for each function, registers the function as a user defined function (UDF) based on a set of input parameters utilized by the function and a type of parameter of each of the input parameters. The subject technology provides access to each registered function in a different application.

Abstract: The subject technology receives a set of files corresponding to a library, the library comprising a set of functions included in the set of files. The subject technology parses the set of files. The subject technology identifies a set of functions in the set of files based on the parsing. The subject technology, for each function, registers the function as a user defined function (UDF) based on a set of input parameters utilized by the function and a type of parameter of each of the input parameters. The subject technology provides access to each registered function in a different application.