Abstract: A zinc oxide-based conductor includes ZnO co-doped with gallium and manganese. Preferably, the doping concentration of the gallium ranges from 0.01 at % to 10 at % and the doping concentration of the manganese ranges from 0.01 at % to 5 at %. More preferably, the doping concentration of the gallium ranges from 2 at % to 8 at % and the doping concentration of the manganese ranges from 0.1 at % to 2 at %. Still more preferably, the doping concentration of the gallium ranges from 4 at % to 6 at % and the doping concentration of the manganese ranges from 0.2 at % to 1.5 at %. The zinc oxide-based conductor is a transparent conductor that is used as an electrode of a solar cell or a liquid crystal display.

Abstract: An electrode plate for a dye-sensitized photovoltaic cell includes a transparent substrate and a transparent conductive film. The transparent conductive film includes a zinc oxide thin film layer formed over the transparent substrate, the zinc oxide thin film layer being doped with gallium, and a tin oxide thin film layer formed over the zinc oxide thin film layer, the tin oxide thin film layer being doped with a dopant.

Abstract: A zinc oxide-based conductor includes ZnO co-doped with gallium and manganese. Preferably, the doping concentration of the gallium ranges from 0.01 at % to 10 at % and the doping concentration of the manganese ranges from 0.01 at % to 5 at %. More preferably, the doping concentration of the gallium ranges from 2 at % to 8 at % and the doping concentration of the manganese ranges from 0.1 at % to 2 at %. Still more preferably, the doping concentration of the gallium ranges from 4 at % to 6 at % and the doping concentration of the manganese ranges from 0.2 at % to 1.5 at %. The zinc oxide-based conductor is a transparent conductor that is used as an electrode of a solar cell or a liquid crystal display.

Abstract: Disclosed are a zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and a Zn oxide based thin film deposited using the Zn oxide based sputtering target. The Zn oxide based sputtering target has a composition of InxHoyO3(ZnO)T, in which x+y=2, x:y is about 1:0.001 to 1:1, and T is about 0.1 to 5.

Abstract: Disclosed are an indium (In) zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and an In Zn oxide based thin film deposited using the In Zn oxide based sputtering target. The In Zn oxide based sputtering target has a composition of (MO2)x(In2O3)y(ZnO)z, in which x:y is about 1:0.01 to 1:1, y:z is about 1:0.1 to 1:10, and M is at least one metal selected from a group consisting of hafnium (Hf), zirconium (Zr), and titanium (Ti).