Abstract: A high-reliability, multi-threshold complementary metal oxide semiconductor (CMOS) latch circuit having low sub-threshold leakage current is provided. More particularly, a latch circuit and flip-flop that can be applied in the deep sub-micron era and that are entirely configured of only CMOS using a combination of a high threshold device and a low threshold device and a low-threshold-voltage stack structure, without using a power gating technique such as multi-threshold CMOS (MTCMOS) and a back bias voltage control technique such as variable threshold CMOS (VTCMOS), are provided.

Abstract: Provided is a voltage/current driven active matrix organic electroluminescent (EL) pixel circuit. In particular, a voltage/current driven active matrix organic EL pixel circuit capable of driving organic ELs by a voltage programming method and a current programming method using one pixel circuit and an organic EL display device that uses such a pixel circuit are provided. The voltage/current driven active matrix organic EL pixel circuit can be used for a voltage driven active matrix organic EL and a current driven active matrix organic EL by programming such that the flexibility and applicability of the pixel circuit and the driving circuit are excellent.

Abstract: Provided is a parallel data path architecture for high energy efficiency. In this architecture, a plurality of parallel process units and a plurality of function units of the process units are controlled by instructions and processed in parallel to improve performance. Also, since only necessary process units and function units are enabled, power dissipation is reduced to enhance energy efficiency. Further, by use of a simple instruction format, hardware can be programmed as the parallel data path architecture for high energy efficiency, which satisfies both excellent performance and low power dissipation, thus elevating hardware flexibility.

Abstract: Provided are a multi-gate MOS transistor and a method of manufacturing the same. Two silicon fins are vertically stacked on a silicon on insulator (SOI) substrate, and four side surfaces of an upper silicon fin and three side surfaces of a lower silicon fin are used as a channel. Therefore, a channel width is increased, so that current driving capability of a device is improved, and high performance nano-level semiconductor IC and highly integrated memory IC can be manufactured through the optimization and stability of a process.

Abstract: Provided is a source driver circuit for an active matrix electroluminescent (EL) display including a digital-to-analog converter/ramp circuit for converting a digital signal into an analog signal, and generating a ramp signal in this process, simultaneously, whereby high degree of integration would be possible since a conventional complicated circuit is not required and gray scale with the high characteristic can be implanted, regardless of a change of a temperature or a threshold voltage.