Patents by Inventor Yil Yuk Yang

Yil Yuk Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • EDMOS device having a lattice type drift region and method of manufacturing the same
    Publication number: 20040002196
    Abstract: The present invention provides an EDMOS (extended drain MOS) device having a lattice type drift region and a method of manufacturing the same. In the case of n channel EDMOS(nEDMOS), the drift region has a lattice structure in which an n lattice having a high concentration and a p lattice having a low concentration are alternately arranged. As a drain voltage is applied, a depletion layer is abruptly extended by a pn junction of the n lattice and the p lattice, so that the entire drift region is easily depleted. Therefore, a breakdown voltage of the device is increased, and an on resistance of the device is decreased due to the n lattice with high concentration.
    Type: Application
    Filed: June 30, 2003
    Publication date: January 1, 2004
    Inventors: Dae Woo Lee, Tae Moon Roh, Il Yong Park, Yil Yuk Yang, Jong Dae Kim