Abstract: The present disclosure provides a process of clean production of electronic grade high-purity copper oxide. The process includes (1) preparing a carbon-ammonia system solution with a certain ratio of CO2, NH3 and H2O; (2) dissolving copper under a slightly negative pressure and at a system temperature less than or equal to 60° C.; the reaction ends until the concentration of copper in the carbon-ammonia system solution reaches 80 to 140 g/L; (3) adding sodium polyacrylate; the reaction solution is heated to 60-80° C. under a reduced pressure for deamination; (4) disposing basic copper carbonate to separate the solid from the liquid by a centrifuge to give an filter cake and copper-containing clear solution; (5) calcining the filter cake at 250-600° C.

Abstract: The present disclosure provides a process of clean production of electronic grade high-purity copper oxide. The process includes (1) preparing a carbon-ammonia system solution with a certain ratio of CO2, NH3 and H2O; (2) dissolving copper under a slightly negative pressure and at a system temperature less than or equal to 60° C.; the reaction ends until the concentration of copper in the carbon-ammonia system solution reaches 80 to 140 g/L; (3) adding sodium polyacrylate; the reaction solution is heated to 60-80° C. under a reduced pressure for deamination; (4) disposing basic copper carbonate to separate the solid from the liquid by a centrifuge to give an filter cake and copper-containing clear solution; (5) calcining the filter cake at 250-600° C.