Patents by Inventor Yiliang Wu

Yiliang Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin-film transistors
    Patent number: 8293363
    Abstract: A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.
    Type: Grant
    Filed: October 20, 2011
    Date of Patent: October 23, 2012
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Hualong Pan, Ping Liu, Yuning Li, Paul F. Smith
  • SEMICONDUCTOR COMPOSITION
    Publication number: 20120261648
    Abstract: An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability.
    Type: Application
    Filed: April 18, 2011
    Publication date: October 18, 2012
    Applicant: Xerox Corporation
    Inventors: Yiliang Wu, Sandra J. Gardner, Anthony James Wigglesworth, Ping Liu, Nan-Xing Hu
  • Small molecule semiconductor
    Patent number: 8283660
    Abstract: Disclosed is a small molecule semiconductor of Formula (I): wherein R1 and R2 are as described herein. The compound is useful in a semiconducting layer for an electronic device, such as a thin-film transistor. Devices including the compound exhibit high mobility and excellent stability.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: October 9, 2012
    Assignee: Xerox Corporation
    Inventors: Anthony James Wigglesworth, Yiliang Wu, Ping Liu, Matthew A. Heuft
  • Tetrahydrotetraazapentacenes in thin-film transistors
    Patent number: 8283659
    Abstract: Compounds of Formula (I) are disclosed: wherein R1-R14, x, y, and z are as defined herein. The compounds are useful as semiconducting materials for electronic devices such as thin-film transistors.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: October 9, 2012
    Assignee: Xerox Corporation
    Inventors: Matthew A. Heuft, Yiliang Wu
  • XANTHENE BASED SEMICONDUCTOR COMPOSITIONS
    Publication number: 20120228584
    Abstract: A small molecule semiconductor of Formula (I): wherein R1, R2, R3 and R4 are independently selected from a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ethynyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, an alkoxy group, an alkylthio group, an alkylsilyl group, a cyano group, and a halogen atom, wherein n is 1 or 2, and wherein X is independently S or
    Type: Application
    Filed: March 8, 2011
    Publication date: September 13, 2012
    Applicant: XEROX CORPORATION
    Inventors: Anthony J. Wigglesworth, Yiliang Wu, Ping Liu, Nan-Xing Hu
  • SOLVENT-BASED INKS COMPRISING SILVER NANOPARTICLES
    Publication number: 20120232206
    Abstract: High performing nanoparticle compositions suitable for printing, such as by inkjet printing, are provided herein. In particular, there is provided a conductive ink formulation comprising silver nanoparticles which has optimal performance, such as, reduced coffee ring effect, improved adhesion to substrates, and extended printhead de-cap time or latency time. The ink formulation comprises two or more solvents and a resin.
    Type: Application
    Filed: March 7, 2011
    Publication date: September 13, 2012
    Applicant: XEROX CORPORATION
    Inventors: Yiliang Wu, Jenny Eliyahu, Ping Liu, Nan-Xing Hu
  • SEMICONDUCTOR COMPOUND
    Publication number: 20120205629
    Abstract: A semiconducting tetrahydroacridinoacridine compound of Formula (I): wherein R1 to R12 are as described herein. The compounds are designed to ensure air stability, good solubility, and high mobility.
    Type: Application
    Filed: February 10, 2011
    Publication date: August 16, 2012
    Applicant: XEROX CORPORATION
    Inventors: Anthony James Wigglesworth, Yiliang Wu, Ping Liu
  • SEMICONDUCTOR COMPOUND
    Publication number: 20120205630
    Abstract: A thiaxanthenothiaxanthene compound of Formula (I): wherein R1 to R10 are independently selected from the group consisting of hydrogen, an alkyl group, a substituted alkyl group, an alkoxy group, an alkylthio group, an alkenyl group, a substituted alkenyl group, an ethynyl group, a substituted ethynyl group, an aryl group, a substituted aryl group, a heteroaryl group, a substituted heteroaryl group, a trialkylsilyl group, a fluorohydrocarbon group, a cyano group and a halogen; and wherein the semiconductor of Formula (I) is predominantly crystalline or liquid crystalline. The compounds are designed to ensure air stability, good solubility, and high mobility.
    Type: Application
    Filed: February 10, 2011
    Publication date: August 16, 2012
    Applicant: XEROX CORPORATION
    Inventors: Anthony James Wigglesworth, Yiliang Wu, Ping Liu
  • SEMICONDUCTING COMPOSITION
    Publication number: 20120205628
    Abstract: A compound of Formula (I): wherein X, A, Y, Z, R1, R2, Ar, n and m are as described herein. The compound of Formula (I) is useful as part of a semiconducting composition to be deposited upon a surface. When heated, the compound of Formula (I) is converted to a crystalline semiconductor with high mobility.
    Type: Application
    Filed: February 10, 2011
    Publication date: August 16, 2012
    Applicant: XEROX CORPORATION
    Inventors: Yiliang Wu, Anthony James Wigglesworth, Ping Liu, Nan-Xing Hu
  • APPARATUS AND METHODS FOR DELIVERY OF A FUNCTIONAL MATERIAL TO AN IMAGE FORMING MEMBER
    Publication number: 20120201585
    Abstract: The presently disclosed embodiments relate generally to an image forming apparatus comprising: a) an imaging member, and b) a delivery member in contact with the surface of the imaging member, wherein the delivery member has a surface layer comprised of an elastic material impregnated with a functional healing material, and the functional healing material is transferred onto the imaging member by diffusion through the elastic material to the surface of the imaging member. Embodiments also pertain to an improved electrophotographic imaging member comprising a very thin outer layer on the imaging member surface, where the outer layer comprises functional healing materials that act as a lubricant and or a barrier against moisture and/or surface contaminants. The improved imaging member exhibits improved xerographic performance, such as reduced friction and deletions in high humidity conditions.
    Type: Application
    Filed: February 3, 2011
    Publication date: August 9, 2012
    Applicant: XEROX CORPORATION
    Inventors: Nan-Xing Hu, Yu Liu, Vladislav Skorokhod, Yiliang Wu, Richard A. Klenkler
  • ELECTRONIC DEVICE
    Publication number: 20120187379
    Abstract: A thin film transistor has a dual semiconducting layer comprising two semiconducting sublayers. The first sublayer comprises a polythiophene and carbon nanotubes. The second sublayer comprises the polythiophene and has no carbon nanotubes. Devices comprises the dual semiconducting layer exhibit high mobility.
    Type: Application
    Filed: January 21, 2011
    Publication date: July 26, 2012
    Applicant: XEROX CORPORATION
    Inventors: Yiliang Wu, Ping Liu, Nan-Xing Hu
  • SEMICONDUCTOR COMPOSITION
    Publication number: 20120187380
    Abstract: A thin film transistor has a semiconducting layer comprising a polythiophene and carbon nanotubes. The semiconducting layer exhibits high mobility and high current on/off ratio.
    Type: Application
    Filed: January 21, 2011
    Publication date: July 26, 2012
    Applicant: XEROX CORPORATION
    Inventor: Yiliang Wu
  • Fabricating amorphous zinc oxide semiconductor layer
    Patent number: 8222076
    Abstract: A process for fabricating a semiconductor layer of an electronic device including: liquid depositing one or more zinc oxide precursor compositions and forming at least one semiconductor layer of the electronic device comprising predominately amorphous zinc oxide from the liquid deposited one or more zinc oxide precursor compositions.
    Type: Grant
    Filed: August 2, 2006
    Date of Patent: July 17, 2012
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Yuning Li, Beng S. Ong
  • Fabricating TFT having fluorocarbon-containing layer
    Patent number: 8222073
    Abstract: A process for fabricating a thin film transistor comprising: (a) forming a gate dielectric; (b) forming a layer including a substance comprising a fluorocarbon structure; and (c) forming a semiconductor layer including a thiophene compound comprising one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages, wherein the layer contacts the gate dielectric and is disposed between the semiconductor layer and the gate dielectric.
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: July 17, 2012
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Ping Liu, Beng S Ong
  • ORGANIC THIN-FILM TRANSISTORS
    Publication number: 20120178890
    Abstract: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.
    Type: Application
    Filed: March 16, 2012
    Publication date: July 12, 2012
    Applicant: Xerox Corporation
    Inventors: Yuning Li, Yiliang Wu, Ping Liu, Paul F. Smith
  • TETRAHYDROTETRAAZAPENTACENES IN THIN-FILM TRANSISTORS
    Publication number: 20120161108
    Abstract: Compounds of Formula (I) are disclosed: wherein R1-R14, x, y, and z are as defined herein. The compounds are useful as semiconducting materials for electronic devices such as thin-film transistors.
    Type: Application
    Filed: December 23, 2010
    Publication date: June 28, 2012
    Applicant: Xerox Corporation
    Inventors: Matthew A. Heuft, Yiliang Wu
  • SEMICONDUCTOR COMPOSITION
    Publication number: 20120161110
    Abstract: An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor of Formula (I): wherein R1, m, n, a, b, c, and X are as described herein. Devices formed from the composition exhibit high mobility and excellent stability.
    Type: Application
    Filed: December 23, 2010
    Publication date: June 28, 2012
    Applicant: Xerox Corporation
    Inventors: Yiliang Wu, Anthony James Wigglesworth, Ping Liu, Nan-Xing Hu
  • SMALL MOLECULE SEMICONDUCTOR
    Publication number: 20120161109
    Abstract: Disclosed is a small molecule semiconductor of Formula (I): wherein R1 and R2 are as described herein. The compound is useful in a semiconducting layer for an electronic device, such as a thin-film transistor. Devices including the compound exhibit high mobility and excellent stability.
    Type: Application
    Filed: December 23, 2010
    Publication date: June 28, 2012
    Applicant: Xerox Corporation
    Inventors: Anthony James Wigglesworth, Yiliang Wu, Ping Liu, Matthew A. Heuft
  • Low polarity nanoparticle metal pastes for printing application
    Patent number: 8207251
    Abstract: A composition that may be used to form an electronic circuit element includes metal nanoparticles in a metal nanoparticle solution, at least a low-polarity additive and a solvent. The low-polarity additive is either a styrenated terpene resin or a polyterpene resin. The composition may be used to form conductive features on a substrate by depositing the composition onto a substrate, and heating the deposited composition on the substrate to a temperature from about 80° C. to about 200° C. to form conductive features on the substrate.
    Type: Grant
    Filed: March 23, 2009
    Date of Patent: June 26, 2012
    Assignee: Xerox Corporation
    Inventors: Marcel P. Breton, Yiliang Wu, Stephan V. Drappel
  • SUBSTITUTED INDOLOCARBAZOLES
    Publication number: 20120157689
    Abstract: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
    Type: Application
    Filed: February 6, 2012
    Publication date: June 21, 2012
    Applicant: Xerox Corporation
    Inventors: Yiliang Wu, Beng S. Ong, Yu Qi, Yuning Li