Abstract: The invention disclosed a data transmission system, comprising a first conversion module provided on the host side, used for converting USB data into data in format which may be transmitted by a data transmission module and for converting data in format which may be transmitted by the data transmission module into USB data the data transmission module provided between the host and the monitor, used for data intercommunication between the host and the monitor, and a second conversion module provided on the monitor side, used for converting USB data into data in format which may be transmitted by the data transmission module and for converting data in format which may be transmitted by the data transmission module into USB data. Wherein, the data transmission module is a DisplayPort auxiliary channel (DisplayPort AUX CH). With the invention, the connection of the personal computer host and the monitor may be realized by using only one DisplayPort cable, thereby USB interfaces may be integrated on the monitor.

Abstract: A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

Abstract: A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.

Abstract: A method of forming bimetallic core-shell metal nanoparticles including a core of a first metal material and a shell of a second metal material, the method including photochemically producing metallic nanoparticle cores of the first metal material, and forming a shell of the second metal material around the cores. The shell can be formed by adding shell-forming precursor materials to a solution or suspension of the cores and photochemically forming the shells around the cores, or by separately photochemically producing metallic nanoparticles of the second metal material and mixing the metallic nanoparticles of the second metal material and the metallic nanoparticle cores to cause the metallic nanoparticles of the second metal material to form a shell around the metallic nanoparticle cores.

Abstract: Methods for consistently reproducing channels of small length are disclosed. An ink composition comprising silver nanoparticles and a surface modification agent is used. The surface modification agent may also act as a stabilizer for the nanoparticles. A first line is printed which forms a modified region around the first line. A second line is printed, which is repelled from the modified region. As a result, a channel between the first line and the second line is formed.

Abstract: An electronic device including in any sequence: (a) a semiconductor layer; and (b) a dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a lower concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.

Abstract: A thin-film transistor has a semiconducting layer which comprises a halogen-coordinated metal phthalocyanine complex of Formula (I) or Formula (II): wherein M is a trivalent metal atom; each m represents the number of R substituents on the phenyl or naphthyl ring, and is independently an integer from 0 to 6; each R is independently selected from the group consisting of halogen, alkyl, substituted alkyl, alkoxy, substituted alkoxy, phenoxy, phenylthio, aryl, substituted aryl, heteroaryl, —CN, and —NO2; and X is a halogen atom.

Abstract: An ink composition comprises silver nanoparticles, hydrocarbon solvent, and an alcohol co-solvent. The ink composition is suitable for printing conductive lines that are uniform, smooth, and narrow on various substrate surfaces.

Abstract: Disclosed are semiconducting polythiophenes comprising a repeating unit of Formula (A) or a copolythiophene of Formula (B): wherein A and B are each alkyl having from 1 to about 25 carbon atoms; and a, b, c, d, e, f, g, x, and y are as defined herein. These polythiophenes have high mobility and are soluble in common organic solvents, so that chlorinated solvents do not need to be used. They are useful for depositing semiconducting layers, particularly in organic thin-film transistors.

Abstract: A thin-film transistor uses a semiconducting layer comprising a semiconducting material of (A): where X, Ar, Ar?, R1, R2, R3, R4, R5, a, b, m, and n are as defined herein. The transistor has improved performance.

Abstract: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.

Abstract: An electronic device, such as a thin film transistor, containing a semiconductor of Formula/Structure (I) wherein each R? is independently at least one of hydrogen, and a suitable hydrocarbon; Ar is an aryl, inclusive of heteroaryl substituents; and M represents at least one thiophene based conjugated segment.

Abstract: Disclosed is a process for purifying monomers of Formula (II): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen; and R? is selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen. After the monomer is synthesized, it is purified by column chromatography using neutral alumina and hexane as an eluent. The resulting product can also be further recrystallized using isopropanol, hexane, heptane, or toluene. Polymers formed from the purified monomer exhibit higher mobility and increased reproducibility of the mobility.

Abstract: A novel barrier layer which protects electronic devices from adverse environmental effects such as exposure to light, oxygen and/or moisture is described. The barrier layer comprises a polymer, an antioxidant, and an inorganic particulate material.

Abstract: A polymer of the following formula wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.

Abstract: A small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein m is 0, 1, or 2, wherein each thiophene unit is the same or different from each other in terms of substituent number, substituent identity, and substituent position, wherein each R1 is independently selected from the group consisting of: (a) a hydrocarbon group, (b) a heteroatom containing group, and (c) a halogen, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units as represented by structure (A1): there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3?-position of the other thiophene unit wherei

Abstract: A semiconducting ink formulation comprises a semiconducting material; a first solvent; and a second solvent which is miscible with the first solvent, has a surface tension equal to or greater than the surface tension of the first solvent, and in which the semiconducting material has a solubility of less than 0.1 wt % at room temperature The surface tension of the ink formulation can be controlled, allowing the formation of semiconducting layers in organic thin film transistors, including top-gate transistors.

Abstract: Organic thin film transistors with improved mobility are disclosed. The transistor contains two interfacial layers between the dielectric layer and the semiconducting layer. One interfacial layer is formed from a siloxane polymer or silsesquioxane polymer. The other interfacial layer is formed from an alkyl-containing silane of Formula (1): where R? is alkyl having from about 1 to about 24 carbon atoms; R? is alkyl having from about 1 to about 24 carbon atoms, halogen, alkoxy, hydroxyl, or amino; L is halogen, oxygen, alkoxy, hydroxyl, or amino; k is 1 or 2; and m is 1 or 2.

Abstract: A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(hydroxyalkyl acrylate-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked. Higher gate dielectric layer thicknesses can be used to prevent current leakage while still having a large capacitance for low operating voltages. Methods for producing such gate dielectric layers and/or thin film transistors comprising the same are also disclosed.

Abstract: An electronic device fabrication method including: (a) providing a dielectric region and a lower electrically conductive region, wherein the dielectric region includes a plurality of pinholes each with an entry and an exit; and (b) depositing an etchant for the lower electrically conductive region into the pinholes that undercuts the pinholes to create for a number of the pinholes an overhanging surface of the dielectric region around the exit facing an undercut area of the lower electrically conductive region wider than the exit.