Abstract: The disclosed technologies provide functionality for non-volatile memory device-assisted live migration of virtual machine (“VM”) data. A host computing device (the “host”) requests that a source non-volatile memory device track changes to a namespace by a VM. In response thereto, the source device tracks changes made by the VM to the namespace and stores one or more data structures that identify the changed portions of the namespace. The host requests the data structures from the source device and requests the contents of the changed portions from the source device. The host then causes the data changed by the VM in the namespace to be written to a namespace on a target non-volatile memory device. The host can also retrieve the device internal state of a child physical function on the source device. The host migrates the retrieved device internal state to a child physical function on the target device.

Abstract: A method of making a negative electrode material for a lithium ion battery, the method comprising: subjecting barley husks to a carbonization process to form carbonized barley husk material; grinding the carbonized barley husk material.

Abstract: A negative electrode material for a lithium ion battery, the material comprising: particles comprising a core, with the core containing silicon, the particles having one or more coating layers disposed around the core, at least one of the coating layers comprising a porous semi-conducting metal oxide.

Abstract: A method of treating a gold film to form gold nitride is proposed, which includes the steps of: generating a nitrogen plasma with a radio frequency field and a power of less than or equal to about 2 kW; and treating said gold film with said nitrogen plasma. The method can be carried out using commercially available apparatus such as an etching machine. The radio frequency field is preferably between 10 and 17 MHz, and the power used to generate the nitrogen plasma is preferably less than or equal to 300 W. The gold film may be biased to achieve directional attack of the plasma. A further method of forming gold nitride is proposed which includes the step of sputtering from a gold target with a nitrogen plasma to form a film of gold nitride on a substrate.