Patents by Inventor Yiming AI

Yiming AI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210384219
    Abstract: Aspects of the disclosure provide a semiconductor device and a method for fabricating the same. The method for fabricating the semiconductor device can include forming a stack of alternating first insulating layers and first sacrificial layers over a semiconductor substrate, and forming a staircase in the stack having a plurality of steps, with at least a first step of the staircase including a first sacrificial layer of the first sacrificial layers over a first insulating layer of the first insulating layers. Further, the method can include forming a recess in the first sacrificial layer, forming a second sacrificial layer in the recess, and replacing a portion of the first sacrificial layer and the second sacrificial layer with a conductive material that forms a contact pad.
    Type: Application
    Filed: March 3, 2021
    Publication date: December 9, 2021
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Di WANG, Wenxi ZHOU, Zhiliang XIA, Yonggang YANG, Kun ZHANG, Hao ZHANG, Yiming AI