Patents by Inventor Yiming Shi
Yiming Shi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250092397Abstract: The disclosure features compositions, systems, and methods for preparation and use of efficient RNA nuclear export of ribozyme-assisted circular RNA molecules (racRNAs). In embodiments, the methods involve characterizing a cell or tissue using racRNAs.Type: ApplicationFiled: November 22, 2024Publication date: March 20, 2025Applicants: The Broad Institute, Inc., Massachusetts Institute of TechnologyInventors: Hailing Shi, Yiming Zhou, Xiao Wang
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Patent number: 12255962Abstract: Systems and methods for identifying and evicting idle sessions include training a machine learning model as a session classifying model to learn rules for classifying active sessions between clients and the cloud-based service. The session classifying model is trained to receive a plurality of parameters pertaining to the document associated with an active session as input and to apply the rules to the plurality of parameters to determine a classification for the active session and to provide an output indicative of the classification for the active session. The session classifying model is then utilized in the cloud-based service to classify the active sessions. The active sessions classified as idle sessions may then be evicted from the cloud-based service.Type: GrantFiled: October 7, 2022Date of Patent: March 18, 2025Assignee: Microsoft Technology Licensing, LLCInventors: Prerana Dharmesh Gambhir, Sharena Meena Pari-Monasch, Khoa Dang Nguyen, Yiming Shi, Yongchang Dong
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Publication number: 20240121311Abstract: Systems and methods for identifying and evicting idle sessions include training a machine learning model as a session classifying model to learn rules for classifying active sessions between clients and the cloud-based service. The session classifying model is trained to receive a plurality of parameters pertaining to the document associated with an active session as input and to apply the rules to the plurality of parameters to determine a classification for the active session and to provide an output indicative of the classification for the active session. The session classifying model is then utilized in the cloud-based service to classify the active sessions. The active sessions classified as idle sessions may then be evicted from the cloud-based service.Type: ApplicationFiled: October 7, 2022Publication date: April 11, 2024Applicants: Microsoft Technology Licensing, LLC, Microsoft Technology Licensing, LLCInventors: Prerana Dharmesh GAMBHIR, Sharena Meena PARI-MONASCH, Khoa Dang NGUYEN, Yiming SHI, Yongchang DONG
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Publication number: 20240033715Abstract: A silica-alumina material, its preparation and application thereof are provided. The silica-alumina material has a SiO2/Al2O3 molar ratio of 0.8-1.5, and has a lamellar structure with an average length of 0.5-2 ?m and an average thickness of 30-80 nm, and its calcined form has a specific XRD pattern. The silica-alumina material has the characteristics of large pore volume, two-stage gradient pore channels of mesopores and macropores, as well as high B acid content as in molecular sieve, and shows crystal characteristics of a molecular sieve, and low impurity content, and thus is suitable for use as a carrier for catalytic materials, particularly a carrier for heavy oil hydrogenation catalysts.Type: ApplicationFiled: January 11, 2022Publication date: February 1, 2024Inventors: Huihong ZHU, Tiebin LIU, Hao JIN, Yiming SHI, Zhenhui LV, Guang YANG, Lu LIU, Tao YANG
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Publication number: 20240004625Abstract: Various embodiments of the present technology include an improved system for measuring the impacts of feature rollouts on machine utilization and service performance. More specifically, embodiments of the present technology include an exposure control system based on randomized machine assignments and a corresponding score card for comparing machine utilization metrics. In an embodiment, a computing apparatus identifies a new feature in a codebase, wherein the codebase has been updated with the new feature across multiple resources, enables the new feature for a target group of the multiple resources while keeping the new feature dormant for a control group of the multiple resources, collects performance information for the target group and the control group for a time period, and generates a visualization of one or more differences between the performance information for the target group and the performance information for the control group for the time period.Type: ApplicationFiled: June 29, 2022Publication date: January 4, 2024Inventors: Prerana Dharmesh GAMBHIR, Sharena Meena PARI-MONASCH, Yongchang DONG, Thanh Trung NGUYEN, Shmuel NAVON, Qiong ZHOU, Yiming SHI, Linh Phuong NGUYEN, Xiao LIANG, Christopher Robert HAYWORTH, Daniel Ming-Wei CHEUNG
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Patent number: 11677084Abstract: A shell reinforcing structure for a fuel cell humidifier comprises a main body shell, fixed plates and grating mechanisms, wherein the side edges of the main body shell are fixedly connected with the fixed plates, the side edge of the fixed plate is provided with an end cover, the upper part of the end cover on the left side is fixedly connected with a dry air inlet tube, the left side of the upper part of the main body shell is fixedly connected with a moisture outlet tube, the right side of the upper part of the main body shell is fixedly connected with a moisture inlet tube, the upper end of the end cover on the right side is fixedly connected with a dry air outlet tube, fixed holes are formed in the side edge surface of the fixed plate.Type: GrantFiled: May 17, 2022Date of Patent: June 13, 2023Assignee: Shenzhen Extender Co., Ltd.Inventors: Yan Feng, Yiming Shi, Chao Liu, Zhaohui Wen
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Publication number: 20230019393Abstract: A sealing structure of a humidifier includes a main structure, a left end cover, and a right end cover. The left end cover and the right end cover are arranged on left and right end faces of the main structure, respectively. A dry air inlet tube is connected to a top end face of the left end cover, and a dry air outlet tube is connected to a top end face of the right end cover. A wet air outlet tube and a wet air inlet tube are connected to left and right sides of a top end face of the main structure, respectively. Membrane tubes are arranged on an inner side of the main structure. Potting resin layers are arranged on both ends of the membrane tubes. High-temperature resistant sealant layers are arranged at connecting portions between each end cover and the main structure.Type: ApplicationFiled: July 14, 2022Publication date: January 19, 2023Applicant: Shenzhen Extender Co., Ltd.Inventors: Zhaohui WEN, Yiming SHI, Yan FENG, Chao LIU
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Patent number: 8243503Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.Type: GrantFiled: December 1, 2010Date of Patent: August 14, 2012Assignee: Seagate Technology LLCInventors: Kaizhong Gao, Haiwen Xi, Yiming Shi, Song S. Xue, Sining Mao
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Publication number: 20110069537Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.Type: ApplicationFiled: December 1, 2010Publication date: March 24, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Kaizhong Gao, Haiwen Xi, Yiming Shi, Song S. Xue, Sining Mao
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Patent number: 7859069Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.Type: GrantFiled: March 16, 2007Date of Patent: December 28, 2010Assignee: Seagate Technology LLCInventors: Kaizhong Gao, Haiwen Xi, Yiming Shi, Song S. Xue, Sining Mao
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Patent number: 7848139Abstract: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.Type: GrantFiled: September 18, 2008Date of Patent: December 7, 2010Assignee: Seagate Technology LLCInventors: Yizhang Yang, Haiwen Xi, Yiming Shi, Kaizhong Gao, Jun Ouyang, Song S. Xue
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Patent number: 7724469Abstract: A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.Type: GrantFiled: December 6, 2006Date of Patent: May 25, 2010Assignee: Seagate Technology LLCInventors: Kaizhong Gao, Haiwen Xi, Yiming Shi, Sining Mao, Patrick J. Ryan, Song S. Xue, Shaoping Li
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Publication number: 20100067288Abstract: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.Type: ApplicationFiled: September 18, 2008Publication date: March 18, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Yizhang Yang, Haiwen Xi, Yiming Shi, Kaizhong Gao, Jun Ouyang, Song S. Xue
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Publication number: 20080225584Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.Type: ApplicationFiled: March 16, 2007Publication date: September 18, 2008Applicant: Seagate Technology LLCInventors: Kaizhong Gao, Haiwen Xi, Yiming Shi, Song S. Xue, Sining Mao
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Publication number: 20080137224Abstract: A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.Type: ApplicationFiled: December 6, 2006Publication date: June 12, 2008Applicant: Seagate Technology LLCInventors: Kaizhong Gao, Haiwen Xi, Yiming Shi, Sining Mao, Patrick J. Ryan, Song S. Xue, Shaoping Li